Scientific highlights illustrated by key publications
- Non-volatile memory cell (January 01st, 2013)
Non-volatile memory cell, Di Pendina, G., Prenat, G. (2013) - Dispositif à mémoire non-volatile (January 01st, 2013)
Dispositif à mémoire non-volatile, Di Pendina, G., Javerliac, V. (2013) - Memory cell with non-volatile data storage (January 01st, 2013)
Memory cell with non-volatile data storage, Di Pendina, G. (2013) - Thermally- assisted MRAM cells with improved reliability at writing (January 01st, 2013)
Thermally- assisted MRAM cells with improved reliability at writing, Bandiera, S., Prejbeanu, I.L. (2013) - Multilevel MRAM for low consumption and reliable write operation (January 01st, 2013)
Multilevel MRAM for low consumption and reliable write operation, Alvarez-Hérault, J., Lombard, L., Bandiera, S., Prejbeanu, I.L. (2013) - Chapter — Spintronic phenomena: Giant Magnetoresistance, Tunnel Magnetoresistance and Spin transfer torque (January 01st, 2013)
C. Baraduc, M. Chshiev, B. Dieny, in Giant Magnetoresistance (GMR) Sensors From Basis to State-of-the-Art Applications, C. Reig, S. Cardoso de Freitas, S. Chandra Mukhopadhyay Eds., Smart Sensors, Measurement and Instrumentation vol.6, Springer (2013). Abstract This introduction to ... - Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications (January 01st, 2013)
Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications, Zhang, Y., Zhao, W.S., Prenat, G., Devolder, T., Klein, J.-O., Chappert, C., Dieny, B., Ravelosona, D., IEEE Transactions ... - Electron-spin-based phenomena arising from pore edges of graphene nanomeshes (January 01st, 2013)
Electron-spin-based phenomena arising from pore edges of graphene nanomeshes, Tada, K., Kosugi, N., Sakuramoto, K., Hashimoto, T., Takeuchi, K., Yagi, Y., Haruyama, J., Yang, H.X., Chshiev, M., Journal of Superconductivity and Novel Magnetism, 26, 1037 ... - MRAM with soft reference layer: In-stack combination of memory and logic functions (January 01st, 2013)
MRAM with soft reference layer: In-stack combination of memory and logic functions, Stainer, Q., Lombard, L., Mackay, K., Sousa, R.C., Prejbeanu, I.L., Dieny, B., , 84 (2013) - MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling (January 01st, 2013)
MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling, Sousa, R.C., Bandiera, S., Marins de Castro Souza, M., Lacoste, B., San Emeterio Alvarez, L., Nistor, L.E., Auffret, S., Ebels, U., Ducruet, C., Prejbeanu, I.L., ... - Magnetic logic functionalities and scalability of thermally-assisted MRAMs (January 01st, 2013)
Magnetic logic functionalities and scalability of thermally-assisted MRAMs, Prejbeanu, I.L., Sousa, R.C., Dieny, B., Nozières, J.-P., Bandiera, S., Mackay, K., , 6577786 (2013) - Scability and logic functionalities of TA-MRAMs (January 01st, 2013)
Scability and logic functionalities of TA-MRAMs, Prejbeanu, I.L., Sousa, R.C., Dieny, B., Nozières, J.-P., Bandiera, S., Alvarez-Hérault, J., Stainer, Q., Lombard, L., Ducruet, C., Conraux, Y., Mackay, K., , 6573618 (2013) - Compact model of a three-terminal MRAM device based on spin-orbit torque switching (January 01st, 2013)
Compact model of a three-terminal MRAM device based on spin-orbit torque switching, Jabeur, K., Prenat, G., di Pendina, G., Buda-Prejbeanu, L.D., Prejbeanu, I.L., Dieny, B., , (2013) - Radiation-hardened MRAM-based FPGA (January 01st, 2013)
Radiation-hardened MRAM-based FPGA, Gonçalves, O., Prenat, G., Dieny, B., IEEE Transactions on Magnetics, 49, 4355 (2013) - Non-volatile runtime-reconfigurable FPGA secured through MRAM-based periodic refresh (January 01st, 2013)
Non-volatile runtime-reconfigurable FPGA secured through MRAM-based periodic refresh, Gonçalves, O., Prenat, G., di Pendina, G., Layer, C., Dieny, B., , 170 (2013)
