Overview
The group covers all aspects of fundamental physics related to spin electronics by employing a wide range of theoretical approaches including ab initio, tight-binding, free electron and diffusive methods, combined with micromagnetic simulation approaches based on solution of Landau-Lifshitz-Gilbert (LLG) equation. This allows explaining experimental observations, providing solutions for specific problems and predicting novel properties and phenomena guiding the experimental work to optimize spintronic nanostructures.
Research directions
Electronic structure and magnetic properties of materials from first principles
Ab initio calculations based on DFT are performed in order to provide insights into fundamental mechanisms of various spintronic phenomena, and to propose novel materials and their efficient combinations with required electronic structure and magnetic properties for optimal performance of spintronic devices.
Spin-dependent transport theories
We employ tight-binding, free electron and diffusive approaches including Green function techniques in the framework of Keldysh and Kubo formalisms, in order to describe spin and charge transport properties in magnetic nanostructures with non-collinear magnetic moments in vertical, lateral and complex geometries.
Theoretical concepts for organic and graphene spintronics
The goal of this topic is to harvest theoretically novel spin-dependent properties (e.g. proximity effects and defect induced magnetism etc.) in organic, graphene and related 2D materials based structures in the context of emerging field of graphene spintronics.
Micromagnetic modeling
Magnetization dynamics (macrospin and micromagnetic) simulations under applied magnetic field and/or spin polarized currents are developed to address functionalities of spintronic devices (e.g. magnetization switching, synchronization and modulation for oscillators) in various geometries. Straightforward analytical models are developed to supplement fast and efficient understanding of the magnetization dynamics.
The team
Former members
Post-docs
- Ali HALLAL (2015-2019)
- Sergey NIKOLAEV (2015-2017)
- Debapriya CHAUDHURY (2016-2018)
- Cristian ORTIZ PAUYAC (2016-2017)
- Hongxin YANG (2013-2015)
PhD
- Daniel SOLIS LERMA (2016-2020)
- Paulo COELHO (with Magnetic Sensors Group, 2014-2017)
Internships
- Libor VOJACEK (2020)
- Brian CHARLES (with MRAM Group, 2016)
Projects
- ANR SpinSpike (2021-2024)
- ANR UFO (2021-2024)
- EU H2020 FET Project Flagship “Graphene” Core 3 (2020-2023)
- ANR MAGICVALLEY (2018-2021)
- ANR FEOrgSPIN (2018-2021)
- EU H2020 FET Project Flagship “Graphene” Core 2 (2018-2020)
- ANR JCJC MATEMAC-3D (2017-2020)
- EU H2020 ICT Project “SPICE” (2016-2020)
- EU H2020 ICT Project “GREAT” (2016-2019)
- ANR ELECSPIN (2016-2019)
- EU H2020 FET Project Flagship “Graphene” Core 1 (2016-2018)
- EU FET FP7 Project Flagship “Graphene” (2013-2016)
- EU M-ERA.NET HEUMEM supported via ANR-DFG (2014-2017)
- UGA Émergence et partenariat stratégique avec Western Digital (2015-2017)
- Samsung SGMI (2014-2017)
- ANR SOSPIN (2013-2016)
- ANR NMGEM (2010-2015)
- AGI14SMI15 AGIR (2014-2015)
Partners
- Transilvania University, Brasov, Romania
- IRIG/PHELIQS, Grenoble, France
- Institut Néel, Grenoble, France
- Unité Mixte Physique CNRS/Thalès, Palaiseau, France
- Laboratoire de Physique des Solides, Orsay, France
- Catalan Institute of Nanotechnology, Barcelona, Spain
- Institut Jean Lamour, Nancy, France
- Moscow Lomonosov State University, Moscow, Russia
- King Abdullah University of science and technology, Thuwal, Saudi Arabia
- University of Puerto Rico, San Juan, PR, USA
- Western Digital Corporation, CA, USA
- University of Bielefeld, Germany
- University of Kaiserslautern, Germany
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- ETH, Zurich, Switzerland
- NIMTE, Ningbo, China
Recent news
- Giant Perpendicular Magnetic Anisotropy Enhancement in MgO-Based Magnetic Tunnel Junction by Using Co/Fe Composite Layer (April 26th, 2021)
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is nonvolatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Here, an alternative design ... - Theoretical study of current induced domain wall motion in magnetic nanotubes with azimuthal magnetization (April 12th, 2021)
We report a theoretical overview of the magnetic domain wall behavior under an electric current in infinitely long nanotubes with azimuthal magnetization. We highlight effects that, besides spin-transfer torques already largely understood in flat strips, ... - Defence Thesis – Modeling of domain walls dynamics in circular cross-section nanowires (March 09th, 2021)
On Monday, the 15th Of March 2021 at 13h30, Arnaud De Riz will defence his thesis “Modeling of domain walls dynamics in circular cross-section nanowires” supervised by D. Gusakova and J.-Ch. Toussaint Place: ONLINE Link to participate ... - Seminar – Spin dynamics and transport at the nanoscale (March 08th, 2021)
On March 17 at 15:00, Manuel dos Santos Dias from Peter Grünberg Institut and Institute for Advance Simulation, Forschungszentrum Jülich, Germany will give us a seminar entitled : Spin dynamics and transport at the nanoscale Place : ... - Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves (March 04th, 2021)
The spin absorption process in a ferromagnetic material depends on the spin orientation relatively to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and ...
