Overview

The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.

Research directions

Perpendicular Anisotropy Materials

High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM

Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

Nanofabrication Challenges

Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.

Perpendicular Shape Anisotropy

A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.

The team

BIAGI Marco

PhD student

CAPRIATA Corrado

Post-doc

DIENY Bernard

Research scientist

GARELLO Kevin

Research scientist

KARAOUI Hanna

PhD student

MARTIN RIO Sergi

PhD student

PHAN Nhat Tan

PhD student

PREJBEANU Lucian

Research scientist

SENAPATI Kintali Subham

PhD student

SOUSA Ricardo

Research scientist

TRINH Quoc Trung

PhD student

Recent news

• Book – Introduction to Random-Access Memory (September 01st, 2017)
  B. Dieny, R. B. Goldfarb, K.-J. Lee (Eds), IEEE Press, Wiley (2017). With chapter authorship from Spintec: L. Buda-Prejbeanu, L. Prejbeanu, B. Diény. DOI: 10.1002/9781119079415 Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on ...
  
• Jean-Pierre Nozières rewarded with the CNRS Innovation Medal 2017 (August 21st, 2017)
  The medal of innovation of CNRS is granted yearly to one or a few persons having conducted ground-breaking research, which led to key innovation in technology, life or social sectors. Since 2011, this distinction has ...
  
• 1 year post-doc position : Development of electric field assisted STT-MRAMs (July 25th, 2017)
  In the frame of our ELECSPIN ANR project , we have an open position for a 12 months post-doc position. ELECSPIN project aims at developing spintronics devices based on manipulating magnetic properties by an electric ...
  
• Seminar : Neuromorphic computing : From a memristive device to the learning process (July 05th, 2017)
  on July, 12th, 14H, Steven Lequeux from Spintec, will give a seminar on “Neuromorphic computing : From a memristive device to the learning process”. The seminar will take place in Building 10.05, room 434. In ...
  
• Review – Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (June 28th, 2017)
  B. Dieny and M. Chshiev, Rev. Mod. Phys. 89, 025008 (2017). Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic ...
  

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Publications