Overview

The Magnetic Random Access Memories (MRAM) group develops advanced concepts in this emerging technology. The goal is to realize cells with improved thermal stability, lower power consumption and/or faster switching. Our research covers material stack deposition, nano-fabrication and electrical test evaluation, for applications as standalone memory and non-volatile logic and more recently in neuromorphic computing architectures.

Research directions

Perpendicular Anisotropy Materials

High energy barriers for spin transfer torque (STT) MRAM cells can be achieved with perpendicular anisotropy magnetic tunnel junctions. Solutions for high density MRAM cells to diameters below 20nm require continuous improvements in perpendicular surface anisotropy, while maintaining high TMR properties.

Perpendicular STT MRAM

Evaluation of MRAM concepts requires simulation of expected reversal mechanisms and electrical characterization of individual cells. We aim at understanding dynamics of magnetization reversal and the expected impact of stack modifications to explore application specific optimizations.

Nanofabrication Challenges

Innovation on dense MRAM using pre-patterned substrates, CMOS integration of multifunctional cells and sub-10nm lateral sizes. Tunnel junction nanofabrication in our platform is essential to evaluate MRAM concepts and performance.

Perpendicular Shape Anisotropy

A solution for sub-10nm cell sizes uses high aspect ratios to generate perpendicular shape anisotropy providing scalable retention at the smallest cell sizes. Spin transfer torque switching is possible in these cells, where the reversal dynamics is now under study.

The team

BIAGI Marco

PhD student

CAPRIATA Corrado

Post-doc

DIENY Bernard

Research scientist

GARELLO Kevin

Research scientist

KARAOUI Hanna

PhD student

MARTIN RIO Sergi

PhD student

PHAN Nhat Tan

PhD student

PREJBEANU Lucian

Research scientist

SENAPATI Kintali Subham

PhD student

SOUSA Ricardo

Research scientist

TRINH Quoc Trung

PhD student

Recent news

• [POSITION FILLED] PhD position – Exploring the scalability of spintronics for 3D devices (March 17th, 2019)
  Topic Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They ...
  
• Impact of heating on the stability phase diagrams of perpendicular MTJs (February 19th, 2019)
  Measured switching diagrams of perpendicular magnetic tunnel junctions exhibit unexpected behavior at high voltages associated with significant heating of the storage layer. The boundaries deviate from the critical lines corresponding to the coercive field, which ...
  
• Seminar – All-optical magnetization switching in spin-valve structure mediated by spin-polarized hot electron transport (December 10th, 2018)
  On January 29, we have the pleasure to welcome Stephane Mangin from Institut Jean Lamour, Univ. de Lorraine, Nancy, France. He will give us a seminar at 11:00, CEA/Spintec, Bat. 1005, room 434A entitled : All-optical ...
  
• [POSITION FILLED] Post-doctoral position – TEM magnetic haracterization of MRAM devices (November 20th, 2018)
  We are looking for a post doctoral researcher to work on a project focused on measuring the magnetic fields and their stability in magnetic memory devices. The candidate will act as the liaison between Spintec ...
  
• PhD defense – « Study and optimization of thermal stability and temperature dependence of P-STTMRAM for industrial applications. » (November 20th, 2018)
  On Wednsday 5 december, Luc TILLIE defends his PhD at 14h00 in room Chrome 1 of Maison Minatec – 3, Parvis Louis Néel, 38054 GRENOBLE Cedex . Luc TILLIE, will defend his thesis, jointly carried out ...
  

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Publications