Overview

The 2D spintronics team is developing the large area growth of 2D materials by molecular beam epitaxy (MBE). Our aim is to study fundamental magnetic and spin transport properties of 2D transition metal dichalcogenides down to the monolayer limit or in van der Waals heterostructures. The main research topics are two-dimensional magnetism, spin-charge interconversion phenomena, magnetic doping and the integration of 2D materials in devices. The strength of the team relies on its long experience in the physics of 2D materials and on a unique (in France and Europe) MBE platform to grow 2D materials and vdW heterostructures on large area.

Research topics

2D magnets

MBE growth of 2D ferromagnets and fundamental study of two-dimensional magnetism: effects of low-dimensionality (down to one monolayer) and low symmetries, manipulation by electric field and strain, proximity effects, topological effects, new spin textures (ex. skyrmions).

Spin-charge interconversion

Fundamental study of spin-charge interconversion phenomena in 2D materials and van der Waals heterostructures using spin pumping, THz spintronic emission and spin-orbit torques.

Magnetic doping

Development of magnetic and electrical doping to synthesize 2D diluted magnetic semiconductors (DMS) or to reach electronic bands with specific spin texture.

2D material integration

Integration of 2D materials in RF transistors, RF switches and memristors. Optimization of carrier mobility and electrical switching processes.

The team

BADEAU Lucas

PhD student

JAMET Matthieu

Research scientist

JEGO Cyriack

PhD student

MARTY Alain

Research scientist

SHARMA Rahul

Post-doc

VERDIERRE Gaétan

Post-doc

VERGNAUD Céline

Research engineer

Recent news

• Proposals for student internships for Spring 2018 (October 03rd, 2017)
  You find here the list of proposals for Master-2 internships to take place during Spring 2018. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are ...
  
• Electrical detection of magnetic domain walls by inverse and direct spin Hall effect (August 28th, 2017)
  Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on ...
  
• Spin-Hall Voltage over a Large Length Scale in Bulk Germanium (July 20th, 2017)
  Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin ...
  
• Giant and tunable spin-charge conversion at oxide interfaces (April 14th, 2017)
  At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin ...
  
• Millimeter-scale layered MoSe₂ grown on sapphire and evidence for negative magnetoresistance (April 14th, 2017)
  We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the ...
  

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Publications

For the full list of publications See the personal webpage of Matthieu JAMET, Alain MARTY and Céline VERGNAUD.