Thematic overview
Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies.
Our group is developing advanced MRAM cell concepts patented at Spintec. The concepts are based on the use of temperature to reduce power consumption and increase the stability of the stored information. These ideas go beyond the conventional MRAM approach. The naturally occurring temperature increase during the write step is not lost, but is instead used to achieve the seemingly opposing goal of lowering the power consumption and increasing the thermal stability in the operating temperature range. Our group fosters young and experienced researchers developing/applying their expertise in the field of MRAM.
Questions to be addressed
Our main research axis is to use the naturally occurring temperature increase during the write step, when a current flows through the magnetic tunnel junction. The heating is used to go above a temperature threshold, making it possible to write the storage layer magnetization. This principle has been applied to in-plane magnetization cells using a storage layer pinned by an anti-ferromagnet and recently to perpendicular anisotropy cells. Our group’s goal is to demonstrate the proof-of-concept and then improve MRAM cell properties.
Our work involves the development of magnetic material systems, nano-fabrication (20-200nm cells), characterization of devices (magnetic & electrical) and simulation of the device behavior. Our activity in these vast fields is as follows;: On materials research, we are developing magnetic tunnel junctions with in-plane and perpendicular magnetic anisotropy. New electrode stacks having the material properties required by each specific concept need to be integrated in magnetic tunnel junctions, while achieving high levels of TMR signal. For the characterization of each concept we determine the write window parameters in terms of magnetic field, power consumption and magnetization reversal dynamics. Macrospin and micromagnetic simulation provide a better physical understanding of the system properties and the possibilities for optimization.
Projects
ANR EXCALYB – Perpendicular Anisotropy Materials for High-Density Non-volatile Magnetic Memory Cells
Crocus R&D – Thermally assisted MRAM
Samsung SGMI
Partners
Crocus Technology
Institut Néel
SP2M/NM
SAMSUNG
Applied Materials
SINGULUS
Recent news
- Three years engineer researcher position [October 27th, 2023]
Spintec laboratory is opening a up-to three years engineer researcher position in the framework of the PEPR electronics (part of France 2030 strategy) – project EMCOM (emerging memories for computing). Context: The cost of transferring information ... - PhD Defense – Fundamentals of ultrascaled 3D magnetic tunnel junctions and integration routes for high density memory array [September 12th, 2023]
On Friday October 13th, at 14:00, M. Nuno CACOILO will defend his PhD thesis entitled : Fundamentals of ultrascaled 3D magnetic tunnel junctions and integration routes for high density memory arrays Place : SPINTEC, CEA Building 10.05, ... - Portrait de lauréats ERC en France – Bernard Diény [August 07th, 2023]
Le ministère de l’enseignement supérieur et de la recherche a dressé le portrait de plusieurs lauréats ERC en France. Bernard Dieny, chercheur en électronique de spin à SPINTEC dans l’équipe MRAM, est l’un d’entre eux. ... - Seminar – Magnetic data storage technology; from the invention of perpendicular magnetic recording (PMR) to the social integration [July 31st, 2023]
On Monday, September 18th 2023, we have the pleasure to welcome in SPINTEC Yoichiro Tanaka from Tohoku University, Japan. He will give us a seminar at 14:00, entitled : Magnetic data storage technology; from the invention ... - Spin transfer torque based magnetic sensor and signal conditioning electronics [May 31st, 2023]
A new type of magnetic sensor based on the spin transfer torque using 50-100nm diameter perpendicular magnetic tunnel junctions was recently reported in the IEEE Sensors Journal. The paper demonstrates the magnetic field sensing principle, ...
SOUSA Ricardo
ricardo.sousa@cea.fr
BALTZ Vincent
vincent.baltz@cea.fr
PREJBEANU Lucian
lucian.prejbeanu@cea.fr
DIENY Bernard
bernard.dieny@cea.fr
