Thematic overview
Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies.
Our group is developing advanced MRAM cell concepts patented at Spintec. The concepts are based on the use of temperature to reduce power consumption and increase the stability of the stored information. These ideas go beyond the conventional MRAM approach. The naturally occurring temperature increase during the write step is not lost, but is instead used to achieve the seemingly opposing goal of lowering the power consumption and increasing the thermal stability in the operating temperature range. Our group fosters young and experienced researchers developing/applying their expertise in the field of MRAM.
Questions to be addressed
Our main research axis is to use the naturally occurring temperature increase during the write step, when a current flows through the magnetic tunnel junction. The heating is used to go above a temperature threshold, making it possible to write the storage layer magnetization. This principle has been applied to in-plane magnetization cells using a storage layer pinned by an anti-ferromagnet and recently to perpendicular anisotropy cells. Our group’s goal is to demonstrate the proof-of-concept and then improve MRAM cell properties.
Our work involves the development of magnetic material systems, nano-fabrication (20-200nm cells), characterization of devices (magnetic & electrical) and simulation of the device behavior. Our activity in these vast fields is as follows;: On materials research, we are developing magnetic tunnel junctions with in-plane and perpendicular magnetic anisotropy. New electrode stacks having the material properties required by each specific concept need to be integrated in magnetic tunnel junctions, while achieving high levels of TMR signal. For the characterization of each concept we determine the write window parameters in terms of magnetic field, power consumption and magnetization reversal dynamics. Macrospin and micromagnetic simulation provide a better physical understanding of the system properties and the possibilities for optimization.
Projects
ANR EXCALYB – Perpendicular Anisotropy Materials for High-Density Non-volatile Magnetic Memory Cells
Crocus R&D – Thermally assisted MRAM
Samsung SGMI
Partners
Crocus Technology
Institut Néel
SP2M/NM
SAMSUNG
Applied Materials
SINGULUS
Recent news
- Giant Perpendicular Magnetic Anisotropy Enhancement in MgO-Based Magnetic Tunnel Junction by Using Co/Fe Composite Layer [April 26th, 2021]
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is nonvolatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Here, an alternative design ... - CRYMCO – An ANR project [April 21st, 2021]
The goal of project CRYMCO is to optimize MRAM cell concepts for operation in cryogenic temperature environments. The project will explore applications for storage in conventional and quantum information processing. In the first case, ... - UFO – An ANR project [February 02nd, 2021]
UFO stands for UltraFast Opto-magneto-spintronics for Futur Nanotechnologies. UltraFast Opto-magneto-spintronics is an emerging field of research that combines the ideas and concepts of magneto-optics and opto-magnetism with spin transport phenomena, supplemented with the possibilities offered ... - CRYMCO – An ANR project [January 28th, 2021]
The goal of project CRYMCO is to optimize MRAM cell concepts for operation in cryogenic temperature environments. The project will explore applications for storage in conventional and quantum information processing. In the first case, ... - SpinSpike – An ANR project [January 19th, 2021]
SpinSpike stands for Spintronic Spiking Neurons. It is a 42-month-long ANR project (2021/2024). Spintronics has recently shown its promise for neuromorphic computing, but is lacking an essential ingredient of biological neural networks: spiking neurons. In this ...
SOUSA Ricardo
ricardo.sousa@cea.fr
BALTZ Vincent
vincent.baltz@cea.fr
PREJBEANU Lucian
lucian.prejbeanu@cea.fr
DIENY Bernard
bernard.dieny@cea.fr
