Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally-assisted magnetoresistive random access memory cells

Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally-assisted magnetoresistive random access memory cells, Cardoso, S., Ferreira, R., Silva, F., Freitas, P., Melo, L.V., Sousa, R.C., Redon, O., MacKenzie, M., Chapman, J.N., Journal of Applied Physics, 99, 08N901 (2006)


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