INSTRUMENTATION

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Spintec has developed a strong expertise in the fields of temperature-dependent magnetic and transport properties, sub-nanosecond magnetization dynamics, high frequency noise and near field magnetic probing. The laboratory is equipped with numerous experimental set-ups, whether home made or commercial, which allow characterizing any system from the laboratory sample to the wafer-level test device. Pictures show some of our experimental set-ups.

 

DMSGeneral-2-b7499

Vibrating Sample Magnetometer

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Dynamic Magnetoresistance Measurement Set-up
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MRFourGen

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MRFourGen
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Magneto-Optical Kerr Effect
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Wafers tester under magnetic field

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DC+RF probe tester
VeecoGen-2-158e9
Automatic Wafers tester under magnetic field

 

The team

Recent news

  • A new spintronic memristive component for neuromorphic circuits (November 18th, 2021)A new spintronic memristive component for neuromorphic circuits
    Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses ...
  • A new prober at SPINTEC for SOT-MRAM (October 06th, 2021)A new prober at SPINTEC for SOT-MRAM
    Spintec has acquired a new 200mm HProbe automatic prober dedicated to the study and characterisation of SOT-MRAM memories. The equipment was funded by the Auvergne-Rhône-Alpes region’s Pack Ambition Recherche 2019 programme, via a research project ...
  • Unveiling the heart of magnetic memory cells thanks to electron holography (November 10th, 2020)Unveiling the heart of magnetic memory cells thanks to electron holography
    Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower ...
  • Reducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020)Reducing the impact of operating temperature  in magnetic memory thanks to perpendicular shape anisotropy
    MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy ...
  • L’Usine Nouvelle met la spintronique à l’honneur (March 28th, 2020)L'Usine Nouvelle met la spintronique à l'honneur
    L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique La pépite ...

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