In spintronics, the spin dependent transport properties of ferromagnetic (F) materials lie at the heart of devices working principles. Conversely, antiferromagnetic (AF) materials are so far used for their magnetic properties only. However, spin dependent transport with AF materials is of high interest: spin absorption lengths are expected to be longer in AF than in […]

Thematic overview Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies. Our group […]

SPINTEC PUBLICATIONS DATABASE (on INAC WEBSITE) The excellence of the scientific production of SPINTEC is unambiguously shown by the number and the impact of the publications. Over the 5 years, the activity of SPINTEC led to 175 papers in international refereed journals , including 23 in journals with the highest impact factors (> 6.5) The number […]

M. Kerekes, C. Papusoi, C. Ducruet, O. Redon, R. Sousa, L. Prejbeanu, B. Dieny Magnetic random access memories (MRAM) have been the first attempt to realize a Spintronics based technology. The information is stored in the relative orientation of two magnetic layers and the readout is obtained from the resistance of a magnetic tunnel junction. […]

J. Hérault, M. Souza, Y. Hadj-Larbi, M-T. Delaye, R. Sousa, L. Prejbeanu, B. Dieny Spin transfer torque (STT) switching in magnetic random access memories (MRAM) is the most power efficient method to write information in MRAM cell. It requires a constant critical current density for writing resulting in lower write currents as the cell size […]

Description Developing materials, stacks and processes for ultimate non volatile memories. Partners CROCUS Technology, Grenoble, France Groupe de physique des matériaux, Rouen, France Institut Néel, Grenoble, France L_SIM, Grenoble, France ICREA, Barcelona, Spain IMDEA, Madrid, Spain UMR CNRS/Thalès Financing CROCUS Technology ERC HYMAGINE Objectives Understanding and mastering exchange bias properties and their distributions in magnetoresistive […]

La qualité magnétique de l’interface entre des couches ferromagnétique et antiferromagnétique est essentielle pour les performances d’une mémoire. Des chercheurs de l’Inac ont proposé d’insérer une barrière empêchant la diffusion des éléments d’une couche dans l’autre. Ils ont pu évaluer l’état magnétique de l’interface grâce à une méthode originale en laboratoire, sans recourir à de […]

S. Petit, N. de Mestier, C. Baraduc, C. Thirion, B. Diény We showed for the first time that the widely studied “spin transfer torque” phenomenon presents a measurable effect below the critical threshold. In the sub-critical regime, the transfer of momentum from the conduction electrons to the magnetisation fluctuations results in a surprising dependence of […]

Description We observe and model the dynamics of a magnetic vortex that circles inside a tunnel junction submitted to a very strong dc current. Partners Institut Néel, Grenoble : C. Thirion Headway Technology, Milpitas, CA-USA Objectives Vortex oscillators could be an alternative to the classical macrospin spintronic RF oscillators. Their main advantage is a naturally […]