Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]

Keywords: Microelectronics, spintronics, ferroelectrics, Fe-RAM, Fe-FET, Design, post-CMOS electronics Summary: Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. This makes ferroelectrics good candidates for ultralow-power neuromorphic AI architectures. We recently demonstrated in a Nature article […]

France is investing more than 38M€ in Spintronics thanks to the PEPR-SPIN exploratory program! SPIN is among the 13 new exploratory programs winners of the second wave of calls for projects Priority Programs and Equipment for Exploratory Research (PEPR). Funded by France 2030, this action (€1 billion) aims to launch research programs in emerging scientific […]

F. Trier, P. Noël, J.-V. Kim, J.-Ph. Attané, L. Vila & M. Bibes✉, Nature Reviews Materials 7, 258 (2022).   In this Review, the recent advances in the new field of oxide spin-orbitronics including the control of spin–orbit-driven effects by ferroelectricity are surveyed, and the future perspectives for the field are discussed. Oxide materials possess […]

The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. Spintronics could potentially […]

Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

On Tuesday, November 16th at 13:30 Richard Schlitz from Magnetism and Interface Physics, ETH Zürich, Switzerland will give us a seminar entitled: Topological transverse transport effects and non-local magnon spin transport Place : CEA Bat. 10.05 Room 445 (limited to persons having a CEA Badge) skype link : https://webconf.cea.fr/ioan-lucian.prejbeanu/C89D5FFJ if this link does not work […]

You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2022. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

Our colleague Jean-Philippe Attané, Associate Professor at the University Grenoble Alpes, was appointed Senior Member of the Institut Universitaire de France (IUF), beginning from October 1, 2021 for a period of five years. The IUF distinguishes every year a small number of university professors for their research excellence and international recognition, providing theses members additional […]

We report very large spin transfer torque driven domain wall velocities, approaching 3000 m/s, in rare-earth free ferrimagnetic Mn4-xNixN thin films close to the angular momentum compensation point. We also observe a reversal of the domain wall motion direction after the angular momentum compensation point. The interest towards ferrimagnets has recently grown because of their […]