TOPOLOGICAL SPINTRONICS



Research team Topological spintronics, within the Concepts group


Context Non-volatile memories (NVMs) offer several advantages for Multiply-Accumulate (MAC) operations in Artificial Intelligence (AI) applications. The first and key advantage is a reduced power consumption: NVMs consume less power compared to traditional volatile memories (like SRAM and DRAM) because they do not require power to maintain their state. This can lead to significant energy […]

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We are looking for candidates as Research Scientist to lead the ferroelectric spintronics activity within SPINTEC. The candidate will lead cutting-edge and innovative research activities in this field, and develop partnerships and collaborations at French and European level. IRIG and SPINTEC Located in the French Alps and surrounded by an exceptional natural environment, the international […]

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In the framework of the French-German laboratory association between SPINTEC and the IFW Dresden (CNRS International Research Project « SPINMAT »), and in collaboration with the C2N institute and the university of Würzburg, a novel plateform was implemented to reveal the non-hermitian topology of scalable quantum electronic circuits. It opens some new perspectives to realize […]

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On Monday May 13, 2024 at 14:00 we have the pleasure to welcome Prof. Stephan ROCHE (ICREA, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST). He will give us a seminar entitled : Topological Spin Transport in Quantum Materials and Entanglement Place: IRIG/SPINTEC, CEA Building 10.05, auditorium 445 (access needs authorization request it before […]

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HEC CHallenge + Forum 2023 Nellow

The start-up Nellow, ​​​a joint research unit from IRIG/SPINTEC and the CNRS/Thales laboratory, was awarded the 1st prize at the HEC Challenge+ Forum. The start-up develops ultra-low-power components for memory, logic and AI. Nellow is a start-up due to be created in 2024. Its technology is the result of 15 years of cutting-edge fundamental and […]

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Spin-orbit torques (SOTs) have the potential to manipulate magnetization using in-plane current, and two-dimensional electron gases (2DEGs) provide a highly efficient spin-to-charge current interconversion. This paper reports the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG.   We recently reported a significant progress in the path towards a next generation of memory devices […]

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Théo FROTTIER is among Best Poster Award winners at INTERMAG 2023 Conference taking place in May 2023 in Sendai, Japan. The title of the poster prepared with Aurélie KANDAZOGLOU, Cécile GREZES of Topological Spintronics team is “Non-Volatile Electric-Field Control of Spin-Orbit Torques and Anomalous Hall Effect in Perpendicular Ferromagnet-SrTiO3 systems”. The presented results clearly show […]

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Y. Fu, J. Li, J. Papin, P. Noël, S. Teresi, M. Cosset-Chéneau, C. Grezes, T. Guillet, C. Thomas, Y.-M. Niquet, P. Ballet, T. Meunier, J.-P. Attané, A. Fert, and L. Vila, Nano Lett. 22, 7867 (2022).   We report the observation of this bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that […]

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You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2023. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

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R&D Engineer position proposal

Title: Design for memory/logic devices Keywords: Design, post-CMOS electronics, spintronics, architectures, ferroelectrics, magneto-electric spin-orbit Summary:Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. As recently demonstrated by Intel, this makes ferroelectrics good candidates for ultralow-power post-CMOS […]

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