Research team Theory/Simulation, within the Concepts group
PhD defense – Memristive magnetic memory for spintronic synapses (December 07th, 2020)
On Thursday, December 17, 2020 at 13H30, Marco Mansueto will defend his PhD entitled: Memristive magnetic memory for spintronic synapses Video conference: https://grenoble-inp.zoom.us/j/96102161721 [Meeting ID : 961 0216 1721; Passcode : MM] Abstract : In the context of a technological era in which the amount of data is exponentially increasing, the development of brain-inspired softwares […]
Read moreMasters thesis projects for Spring 2021 (September 15th, 2020)
You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2021. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship. You may download the […]
Read moreVery large Dzyaloshinskii-Moriya interaction and skyrmions in 2D Janus dichalcogenides (August 13th, 2020)
The intense recent research on skyrmions has focused on multilayers of classical magnetic materials (Co, CoFeB, Fe…). In this work, the authors explore skyrmions in van der Waals bi-dimensional magnets, a new type of magnetic material in the broad family of 2D materials. Using ab initio and Monte Carlo calculations, they demonstrate that skyrmions should […]
Read moreMagnetic skyrmions are topologically protected spin textures of great interest for nanoscale information storage and processing. However, stabilizing small skyrmions without applying an external magnetic field remains challenging. This study employs a thin ferromagnetic layer exchange-biased by an antiferromagnetic film to stabilize ferromagnetic skyrmions down to 30 nm in diameter, at zero magnetic field. In […]
Read moreOur colleague Mairbek Chshiev, professor at the University Grenoble Alpes, was appointed Senior Member of the Institut Universitaire de France (IUF) beginning from October 1, 2020 for a period of five years. The IUF distinguishes each year a small number of university professors for their research excellence and international recognition, providing theses members additional support […]
Read moreSpin-orbitronics at a topological insulator-semiconductor interface (July 02nd, 2020)
Topological insulators (TI) represent a new class of insulating materials hosting metallic surface states. Moreover, those surface states exhibit a Dirac cone energy dispersion where the strong spin-orbit coupling leads to a helical spin texture at the Fermi level. This property can be exploited to detect spin currents in conventional semiconductors like silicon or germanium. […]
Read moreAll-optical switching of magnetization in Tb/Co-multilayer based electrodes (April 30th, 2020)
This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]
Read morePhD Defense – Proximity-induced transport phenomena in graphene-based spintronic device (April 28th, 2020)
On Wednesday May 13, 2020 at 14h Daniel SOLIS LERMA from SPINTEC will defend his PhD thesis entitled : Proximity-induced transport phenomena in graphene-based spintronic devices Place : the defense (public) will take place by video-conference. Contact us to have the link (mair.chshiev@cea.fr) Abstract: In this thesis we present a study of transport properties of […]
Read moreReducing the impact of operating temperature in magnetic memory thanks to perpendicular shape anisotropy (April 01st, 2020)
MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]
Read moreSpin accumulation dynamics in spintronic devices in the terahertz regime (March 26th, 2020)
Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]
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