Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]

Spintec développe une mémoire STT-MRAM dix fois plus rapide que les produits annoncés pour 2016 chez Samsung ou Intel. Sa vitesse d’écriture est inférieure à la nanoseconde, contre 5 à 10 nanosecondes habituellement. La différence tient au processus de déclenchement du pulse d’écriture. Spintec l’accélère grâce à deux polariseurs d’aimantation orthogonale, placés de part et […]

Les mémoires magnétiques à base de jonctions tunnel magnétiques appelées Spin-Transfer-Torque Random Access Memories (STT-MRAM) suscitent un intérêt considérable pour la micro-électronique grâce à leurs avantages combinés de non-volatilité, densité, vitesse, endurance. Dans ce travail, une nouvelle variété de telles mémoires a été développée offrant une vitesse d’écriture sub-ns appropriée pour les applications de type […]

Training by research: doctoral and post doctoral training   Training students and professionals through research is one of the SPINTEC key missions. Ensuring the highest standard of scientific and human management towards the early stage researchers (PhDs and post docs) is a commitment we share within all INAC teams.   SPINTEC students belong to 2 […]

Thematic overview Spintec was originally heavily involved in read heads for disk drive, yet this activity all but vanished due to the strong consolidation of the industry, now with only two players with strong internal R&D capabilities. The technologies used consumer applications sensors remain relatively simple and the industry is extremely conservative, which limits the […]

MRAMs nowadays constitute one of the main areas of application of spin electronics. However, besides the standalone memory application, the same hybrid CMOS/magnetic tunnel junctions (MTJ) technology is also extremely promising in the field of logic and more generally can yield a totally new approach in the way electronic devices are designed. Most CMOS devices […]

Thematic overview   Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies.   […]

Integrated monolithic 3D magnetic compass G. Gaudin, Ph. Sabon, C. Baraduc, A. Schuhl, I.L. Prejbeanu We developed a new 3D magnetometer concept, fully integrated, more compact, more accurate and more efficient than current solutions. This magnetometer is perfectly suitable for mobile applications of spatial localization requiring a large autonomy. More and more portable consumer devices […]

YIG delay lines: Description: Microwave wireless telecommunications are the backbone of the information age. They enable the exchange of data between connected objects. The Internet of Things is expected to connect as much as 80 billion objects by 2020. Accommodating such large number of handsets requires a paradigm shift in the performance of microwave analog […]

Selma LEULMI a gagné un prix du meilleur Poster, décerné par la Fondation Nanosciences lors de la Journée « 7th Workshop ’Nano & Micro-Environments for Cell Biology’ » du 30/01/2014. Selma LEULMI received the Poster Award of the Nanosciences Foundation, in recognition of the great quality of her poster presentation, for the « 7th Workshop […]