Jeudi 21 Janvier 2016 à 14H00, Phelma MINATEC – Amphithéâtre M001 (3 Parvis Louis Néel – 38016 Grenoble) Monsieur Antoine CHAVENT du DSM/INAC/SPINTEC soutiendra une thèse intitulée « Réduction du champ d’écriture de mémoires magnétiques à écriture assistée thermiquement à l’aide du couple de transfert de spin » Les mémoires magnétiques à accès aléatoire (MRAM) développées par […]

During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing. As part of collaboration between Spintec and Crocus Technology, we brought out that most of the influence of the spin transfer torque is exerted during the last part of the voltage […]

Magnetic Origami Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. Mihai MIRON The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the functionality […]

Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]

Spintec développe une mémoire STT-MRAM dix fois plus rapide que les produits annoncés pour 2016 chez Samsung ou Intel. Sa vitesse d’écriture est inférieure à la nanoseconde, contre 5 à 10 nanosecondes habituellement. La différence tient au processus de déclenchement du pulse d’écriture. Spintec l’accélère grâce à deux polariseurs d’aimantation orthogonale, placés de part et […]

Les mémoires magnétiques à base de jonctions tunnel magnétiques appelées Spin-Transfer-Torque Random Access Memories (STT-MRAM) suscitent un intérêt considérable pour la micro-électronique grâce à leurs avantages combinés de non-volatilité, densité, vitesse, endurance. Dans ce travail, une nouvelle variété de telles mémoires a été développée offrant une vitesse d’écriture sub-ns appropriée pour les applications de type […]

Training by research: doctoral and post doctoral training   Training students and professionals through research is one of the SPINTEC key missions. Ensuring the highest standard of scientific and human management towards the early stage researchers (PhDs and post docs) is a commitment we share within all INAC teams.   SPINTEC students belong to 2 […]

Thematic overview Spintec was originally heavily involved in read heads for disk drive, yet this activity all but vanished due to the strong consolidation of the industry, now with only two players with strong internal R&D capabilities. The technologies used consumer applications sensors remain relatively simple and the industry is extremely conservative, which limits the […]

MRAMs nowadays constitute one of the main areas of application of spin electronics. However, besides the standalone memory application, the same hybrid CMOS/magnetic tunnel junctions (MTJ) technology is also extremely promising in the field of logic and more generally can yield a totally new approach in the way electronic devices are designed. Most CMOS devices […]

Thematic overview   Magnetic Random Access Memories (MRAM) is a non-volatile memory technology, where information is stored by the magnetization direction of magnetic electrodes, very similar to computer hard-disk drives. The goal for MRAM memory is to simultaneously achieve high-speed read/write times, high density and unlimited cycling compared to other existing and emerging technologies.   […]