We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

Overview NANOVIBER (EURONANOMED-II ERA-NET project) was accepted at the Fall 2016. Context: Despite the progress of chemo-radiotherapy, molecular and cellular therapies as well as neurosurgery, glioblastoma remains a deadliness disease. Beside drugs, radiotherapy and surgery, “physical” therapies are synergistic opportunities to solve this major biomedical bottleneck. Paramagnetic particles have been extensively used in association with magnetic […]

Dr. David Soriano Catalan Institute of Nanoscience and Nanotechnology (ICN2)  Where: room 434 A, Building 10.05, CEA-Grenoble.             The possibility to manipulate the magnetism at the atomic scale in 2D materials shown promising for the next generation of data storage devices and for quantum technologies. Hydrogenated graphene has demonstrated to be a good platform for such […]

In the frame of our H2020 project GREAT we have one open position for a postdoc or term contract for 18 months to characterize the spin transfer torque induced magnetic switching as well as rf excitations of perpendicular magnetic tunnel junction devices (pMTJs) with the aim to demonstrate the dual functionality for memory and microwave […]

HProbe is the latest spin-off company from SPINTEC, based on our expertise in MRAM research at the wafer scale. HProbe offers a 3D magnetic field wafer-level electrical tester for all types of MRAM (STT, SOT, OST, …), planar and perpendicular MTJ, magnetic sensors etc. The tester embed all standard procedures for testing and analyzing devices. […]

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

Who : Claire HAMELIN from DRF/INAC/SPINTEC When : On the 28th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre du CNRS bâtiment A-3ème étage – 25 rue des Martyrs, Grenoble Title : Spin orbit torques for cache memory applications Abstract : The development of a non-volatile memory with unlimited […]

Van der Waals epitaxy of III-Nitrides semiconductors ((Ga, In, Al)N) on 2D crystals ((Mo,W)Se2) for optoelectronics applications Van der Waals (VdW) epitaxy is a particularly attractive method to grow crystalline materials without any requirement of lattice matching with the underlying material. Indeed, VdW epitaxy mechanisms relies on a very weak interaction between the epilayer and […]

Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny