Dr. David Soriano Catalan Institute of Nanoscience and Nanotechnology (ICN2)  Where: room 434 A, Building 10.05, CEA-Grenoble.             The possibility to manipulate the magnetism at the atomic scale in 2D materials shown promising for the next generation of data storage devices and for quantum technologies. Hydrogenated graphene has demonstrated to be a good platform for such […]

In the frame of our H2020 project GREAT we have one open position for a postdoc or term contract for 18 months to characterize the spin transfer torque induced magnetic switching as well as rf excitations of perpendicular magnetic tunnel junction devices (pMTJs) with the aim to demonstrate the dual functionality for memory and microwave […]

HProbe is the latest spin-off company from SPINTEC, based on our expertise in MRAM research at the wafer scale. HProbe offers a 3D magnetic field wafer-level electrical tester for all types of MRAM (STT, SOT, OST, …), planar and perpendicular MTJ, magnetic sensors etc. The tester embed all standard procedures for testing and analyzing devices. […]

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

Who : Claire HAMELIN from DRF/INAC/SPINTEC When : On the 28th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre du CNRS bâtiment A-3ème étage – 25 rue des Martyrs, Grenoble Title : Spin orbit torques for cache memory applications Abstract : The development of a non-volatile memory with unlimited […]

Van der Waals epitaxy of III-Nitrides semiconductors ((Ga, In, Al)N) on 2D crystals ((Mo,W)Se2) for optoelectronics applications Van der Waals (VdW) epitaxy is a particularly attractive method to grow crystalline materials without any requirement of lattice matching with the underlying material. Indeed, VdW epitaxy mechanisms relies on a very weak interaction between the epilayer and […]

Special issue on Spintronics, published in the proceedings of the IEEE, vol.104 (10), October 2016 Editors: Hideo Ohno, Mark Stiles, Bernard Dieny

Magnonic is an emerging research field, which aims at exploiting the transport of pure spin current in magnetic materials. The elementary excitations are the propagating spin-waves, also called magnons, which are bosonic quasiparticles. The advantages over conventional electronic devices are a significant reduction in energy consumption thanks to the absence of Joule heating, as well as new features taking […]

On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.