Our colleague Hélène Béa, associate professor at the University Grenoble Alpes, was appointed Junior Member of the Institut Universitaire de France (IUF) beginning from October 1, 2021 for a period of five years. The IUF distinguishes every year a small number of university professors and associate professors for their research excellence and international recognition, providing […]

We report very large spin transfer torque driven domain wall velocities, approaching 3000 m/s, in rare-earth free ferrimagnetic Mn4-xNixN thin films close to the angular momentum compensation point. We also observe a reversal of the domain wall motion direction after the angular momentum compensation point. The interest towards ferrimagnets has recently grown because of their […]

Q. Shao, P. Li, L. Liu, H. Yang, S. Fukami, A. Razavi, H. Wu, K. Wang, F. Freimuth, Y. Mokrousov, M. D. Stiles, S. Emori, A. Hoffmann, J. Åkerman, K. Roy, J.-P. Wang, S.-H. Yang, K. Garello, W. Zhang, IEEE Transactions on Magnetics, doi: 10.1109/TMAG.2021.3078583. Spin-orbit torque (SOT) is an emerging technology that enables the […]

Subject and context: The candidate will work in the frame of the MATHEEIAS project. MATTHEIAS stands for MAgneto-THermo-Electric Effects In Antiferromagnetic Spintronics. It is a collaborative international project co-funded by the French ANR and the German DFG. The project relies on the following consortium: SPINTEC Grenoble, CINaM Marseille, TUD Dresden / Uni. Konstanz, and JGU […]

Magnetic skyrmions are local twists of the magnetization which hold promise as nm scale information carrier. Here we demonstrate that focused He+-ion irradiation can be used to create and guide skyrmions in magnetic tracks. This work opens up a new path to manipulate magnetic skyrmions in magnetic memory and logic devices. Magnetic skyrmions are currently […]

Perpendicular anisotropy Magnetic Random Access Memory (MRAM) can contribute reduced power consumption in electronic circuits. These spintronic devices also rely on materials like Co, Pt and Ru, having associated supply risk or environmental impact. A sustainability analysis of these devices shows, that the impact of the wafer substrate is much larger than that of the […]

Atomistic spin simulations have been carried out to study the probability of all-optical switching of [Tb/Co] multilayered thin films. Playing with the composition of the sample, the material parameters and the fluence of the laser pulse we have shown the possibility to get single-shot all-optical switching. Since the first experimental observation of all-optical switching phenomena, […]

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is nonvolatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Here, an alternative design of tunnel junctions comprising FeCoFe|MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) is proposed, leveraging the interfacial PMA […]

Two-dimensional materials like graphene or transition metal dichalcogenides (TMDs) have attracted a lot of attention during the last decade for their original electronic properties intimately related to their 2D character and symmetries. At Spintec, the “2D spintronics” team develops the molecular beam epitaxy of TMDs for spintronics and has recently succeeded in growing a new […]

The goal of project CRYMCO is to optimize MRAM cell concepts for operation in cryogenic temperature environments. The project will explore applications for storage in conventional and quantum information processing. In the first case, MRAM with low energy dissipation for cryogenic environments could result in power savings by operating at low temperature, when the cost/power […]