On december 05, We have the pleasure to welcome professor Lionel TORRES from Polytech Montpellier, Université de Montpellier. He comes at Grenoble for the PHD defense of Luc TILLIE at 14H. He kindly takes this opportunity to give us a seminar at 10:15, CEA/Spintec, Bat. 1005, room 434A entitled : “Normally-off“ Computing for Smart Systems […]

Due to the nanometer size of magnetic tunnel junctions and high interfacial resistance of ultrathin MgO tunnel barriers, temperature modulation at GHz frequency can be achieved in these devices and efficiently use to amplify microwaves in spintronics oscillators. Spintronics oscillators use two major phenomena discovered in spin-electronics: the tunnel magnetoresistance of magnetic tunnel junctions (MTJ) […]

Heat assisted magnetic recording (HAMR) is a new hard disk drive (HDD) recording technology which uses a temporary near field heating of the media during write to increase hard disk drive storage density. It has been under development in HDD industry for more than 10 years. A phenomenon totally overlooked during the past development of […]

Bernard DIENY receives the 2018 IEEE Carrier Achievement Award for contributions to spintronics applications including spin-valves and MRAMs and for strengthening the relationship between magnetics and microelectronics communities. The Award will be handed out at the upcoming MMM/Intermag conference in Washington in January 2019. Through this award Bernard Diény becomes a life member in the […]

You find here the list of proposals for Master-2 internships to take place during Spring 2019. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply. You may either download the full list of proposals, along with an introduction to the SPINTEC […]

On Friday 31 Aug, Nicolas PERRISSIN defends his PhD at 14h00 in room M001 of Grenoble INP – Phelma – 3 Parvis Louis Néel – Grenoble. Keywords: STT MRAM, perpendicular shape anisotropy, Ultimate scalability Most of the actual STT-MRAM development effort is nowadays focused on out-of-plane magnetized MTJ taking advantage of the perpendicular magnetic anisotropy […]

A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]

Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. View online: DOI: 10.1557/mrs.2018.96 Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density […]

L’alliance de la microélectronique et du magnétisme, ou spintronique, s’avère prometteuse. Les géants du secteur s’intéressent notamment aux mémoires magnétiques. Industrie et Technologies 1007, 1st March 2018 [French]

A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]