You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2021. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship. You may download the […]

We demonstrate in this study a fabrication process that enables the realization of a top transparent conductive electrode of magnetic tunnel junctions (MTJs), building blocks of magnetic random access memories (MRAMs). This work opens up the realization of future and faster nonvolatile memories based on hybrid spintronic photonic circuits. This new process has been electrically […]

The European consortium SpintronicFactory, largely supported by the French laboratories Spintec (Grenoble) and the CNRS-Thales Joint Lab (Palaiseau), publishes in the journal Nature Electronics an ambitious roadmap for spintronics. This discipline on the borderline between magnetism and microelectronics is indeed reaching maturity, offering broad prospects for innovation. B. Dieny, I. L. Prejbeanu, K. Garello, P. […]

We are pleased to announce the arrival on June 2, 2020 of Kevin Garello at SPINTEC. Kevin comes from IMEC Belgium, where he was in charge of exploratory magnetic memory activities, being in addition the leader of spintronic work package for Graphene Flagship. Within the MRAM team, Kevin will bring his vision and know-how of […]

This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

Atsufumi Hirohata, Keisuke Yamada, Yoshinobu Nakatani, Ioan-Lucian Prejbeanu, Bernard Diény, Philipp Pirro, Burkard Hillebrands Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to reduce their power consumption and to increase their memory and processing capabilities. Such devices utilise the spin degree of freedom of electrons and/or holes, which can also interact […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]

Spin accumulation phenomena frequently occur in spintronic devices due to the difference of electrical resistivities of spin-up and spin-down electrons in magnetic materials. They are balanced by spin relaxation phenomena. These phenomena take place in a diffusive regime which involves numerous individual scattering events. Consequently, although the time scale of elastic electron scattering in metals […]

Hprobe passe à la vitesse supérieure. Après avoir levé 300 000 euros en avril 2018, la start-up issue de SPINTEC et spécialiste du test magnétique de composants semi-conducteurs vient de boucler un deuxième tour de table de 2 millions d’euros. Parmi les investisseurs figurent le fond d’investissement taïwanais ITIC et l’équipementier japonais de production de […]