SPINTEC is opening a 2-year post-doctoral position on modelling of all optical switching using light carrying orbital momentum Context: The manipulation of magnetization by ps or fs light pulses has become a very exciting topic nowadays opening routes towards ultrafast magnetization control. To date, most of the light-spin interaction studies made use of spin angular […]

On Thursday, July 7 at 14:00 we have the pleasure to welcome Dr. Tiffany SANTOS from Western Digital Corporation, CA, USA. She is 2022 IEEE Magnetics Society Distinguished Lecturer and will give us a seminar entitled : Spins, Bits, and Flips: Essentials for High-Density Magnetic Random-Access Memory Place: SPINTEC, CEA/IRIG, Bat. 10.05, Room 445 Zoom […]

On Tuesday, June 7th at 14:00, M. Alvaro PALOMINO will defend his PhD thesis entitled: Spintronic devices with reduced content of Platinum and Ruthenium Place : CEA Bat. 10.05 Room 445 Zoom link https://univ-grenoble-alpes-fr.zoom.us/j/9618654716?pwd=MFNPYXRyU1N0R282d3lOYUovWm1HQT09 See access conditions at the end Abstract : In the field of information and communication technologies (ICT), the development of non-volatile memories […]

Magnetic Random Access Memory recently started to be commercialized by all main microelectronics factories. In MRAM, the information is coded via parallel or antiparallel magnetic configurations to represent ones and zeroes. The technology is intrinsically nonvolatile, meaning it can keep information without being electrically powered. However, nonvolatility often comes with a trade-off between the information […]

STOCHNET stands for Hybrid Stochastic Tunnel Junction Circuits for Optimization and Inference. The motivation behind StochNet is to explore — through experimental demonstrations with hybrid CMOS stochastic tunnel junction circuits and simulations of theoretical architectures — the technological feasibility of recently explored brain inspired computing frameworks that point towards neural stochasticity as being fundamental to […]

Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memory called MRAMs (Magnetic Random Access Memory) based on magnetic tunnel junctions. MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) are attracting an increasing interest […]

Spintec has acquired a new 200mm HProbe automatic prober dedicated to the study and characterisation of SOT-MRAM memories. The equipment was funded by the Auvergne-Rhône-Alpes region’s Pack Ambition Recherche 2019 programme, via a research project run jointly by SPINTEC and the start-up Antaios. A few years ago, SPINTEC discovered a new writing mechanism, the SOT […]

You find here the list of proposals for Master-2 internships to take place at Spintec during Spring 2022. In most cases, these internships are intended to be suitable for a longer-term PhD work. Interested Master-1 students are also encouraged to apply, as well as students not phased for a Spring internship, especially those coming from […]

This study investigates heavy-ion irradiation effects on Perpendicular Magnetic Anisotropy Spin-Transfer Torque Magnetic Tunnel Junction devices (p-STT-MTJs). The radiative campaign took place at the Cyclotron Resource Centre of Université Catholique de Louvain (UCL).   Designers of space systems have to deal with ensuring complex data processing, while obtaining, at the same time, a proper level […]