Research team MRAM memories, within the Devices group
Post-Doctoral and fixed term R&D Engineer openings at SPINTEC (December 16th, 2024)
Project: SPINTEC offers several 24-month positions for postdoctoral researchers or research engineers, funded by the EU and French National Research Agency ANR. The projects focus on spintronic innovations for a sustainable digital technology, emphasizing advanced magnetic memory and spintronics-based radiofrequency technologies. Work will occur within the ‘MRAM’ and ‘RF-spintronics’ teams, in collaboration with ‘Nanofabrication’ and […]
Read moreImpact of external magnetic field on Spin Transfer Torque magnetic memory operation (December 09th, 2024)
The extent to which an external magnetic field can influence the operation of Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) remains a critical question within the microelectronics industry in particular regarding its use in automotive industry. SPINTEC is actively engaged in an international technical group comprising academic and industrial experts in MRAM technology, with a particular […]
Read moreSeminar – Selected applications and trends in magnetoresistive sensors (November 25th, 2024)
On Friday November 29, 2024 at 13:30 we have the pleasure to welcome Johannes Paul from SENSITEC. He will give us a seminar entitled: Selected applications and trends in magnetoresistive sensors Place: IRIG/SPINTEC, CEA Building 10.05, auditorium 445 Video conference: https://univ-grenoble-alpes-fr.zoom.us/j/98769867024 Meeting ID: 987 6986 7024 Passcode: 025918 Abstract: In this talk I will introduce […]
Read moreSeminar – Embedded STT-MRAM – Building Trust and Moving Ahead (November 25th, 2024)
On Friday November 29, 2024 at 10:00 we have the pleasure to welcome Johannes Müller from GlobalFoundries. He will give us a seminar entitled: Embedded STT-MRAM – Building Trust and Moving Ahead Place: IRIG/SPINTEC, CEA Building 10.05, auditorium 445 Video conference: https://univ-grenoble-alpes-fr.zoom.us/j/98769867024 Meeting ID: 987 6986 7024 Passcode: 025918 Abstract: In this talk we will […]
Read moreA dipolar core-shell perpendicular shape anisotropy memory cell (July 08th, 2024)
We propose the concept of a core-shell composite structure coupled antiparallel via dipolar interaction, as the storage layer in perpendicular-shape-anisotropy magnetic random access memory (PSA MRAM). Benefits compared with a standard PSA MRAM include a reduced write time and the stray field. CoFeB core with a Co shell (height 8 nm; diameters 14 and 20 […]
Read morePhD position – Spin transfer torque magnetic field sensing (June 14th, 2024)
Topic PhD scholarship to work on a novel sensing approach exploring spin transfer torque (STT) for magnetic field sensing in perpendicular anisotropy magnetic tunnel junctions. The project aims at high-density low power consumption sensors, departing from and improving on conventional magnetoresistive sensors. Candidate with mandatory University Master degree with following profile: Physics, Engineering, Material Science […]
Read moreSeminar – Ten Years of 2D Materials based Spintronics Research: Highlights and Future (April 15th, 2024)
On Tuesday May 14, 2024 at 14:00 we have the pleasure to welcome Prof. Stephan ROCHE (ICREA, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST). He will give us a seminar entitled: Ten Years of 2D Materials based Spintronics Research: Highlights and Future Place: Salle G-1A002 Amphi Ampère, Bâtiment GreEn-ER, 21 Avenue des Martyrs, […]
Read morePortrait – Louis Farcis, doctorant à SPINTEC (February 13th, 2024)
Louis Farcis est chercheur doctoral à SPINTEC. Son travail concerne les architectures non-conventionnelles pour réaliser des calculs à base de réseaux de neurones spintroniques. Son portrait a été réalisé par l’Institut de Recherche Interdisciplinaire de Grenoble, auquel est rattaché SPINTEC.
Read moreResistively-coupled stochastic MTJ for energy-based optimum search (January 22nd, 2024)
We study recurrent networks of binary stochastic Magnetic Tunnel Junctions (sMTJ), aiming at efficiently solving computationally hard optimization problems. After validating a prototyping route, we investigate the impact of hybrid CMOS+MTJ building block variants on the quality of stochastic sampling, a key feature for optimum search in a complex landscape. We carry out a functional […]
Read moreDeterministic switching in Voltage Controlled Magnetic Anisotropy Magnetic at Cryogenic Temperatures (January 22nd, 2024)
Cryoelectronics has the potential to become important in high-performance computing applications and in the context of quantum computing. For low-temperature operation, it becomes imperative to reduce power dissipation, and improved device efficiency could even offset the power consumption required for cooling. In magnetic memories, voltage-controlled magnetic anisotropy (VCMA) is a promising approach to minimize the […]
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