Research team MRAM memories, within the Devices group
A dipolar core-shell perpendicular shape anisotropy memory cell (July 08th, 2024)
We propose the concept of a core-shell composite structure coupled antiparallel via dipolar interaction, as the storage layer in perpendicular-shape-anisotropy magnetic random access memory (PSA MRAM). Benefits compared with a standard PSA MRAM include a reduced write time and the stray field. CoFeB core with a Co shell (height 8 nm; diameters 14 and 20 […]
Read morePhD position – Spin transfer torque magnetic field sensing (June 14th, 2024)
Topic PhD scholarship to work on a novel sensing approach exploring spin transfer torque (STT) for magnetic field sensing in perpendicular anisotropy magnetic tunnel junctions. The project aims at high-density low power consumption sensors, departing from and improving on conventional magnetoresistive sensors. Candidate with mandatory University Master degree with following profile: Physics, Engineering, Material Science […]
Read moreSeminar – Ten Years of 2D Materials based Spintronics Research: Highlights and Future (April 15th, 2024)
On Tuesday May 14, 2024 at 14:00 we have the pleasure to welcome Prof. Stephan ROCHE (ICREA, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, BIST). He will give us a seminar entitled: Ten Years of 2D Materials based Spintronics Research: Highlights and Future Place: Salle G-1A002 Amphi Ampère, Bâtiment GreEn-ER, 21 Avenue des Martyrs, […]
Read morePortrait – Louis Farcis, doctorant à SPINTEC (February 13th, 2024)
Louis Farcis est chercheur doctoral à SPINTEC. Son travail concerne les architectures non-conventionnelles pour réaliser des calculs à base de réseaux de neurones spintroniques. Son portrait a été réalisé par l’Institut de Recherche Interdisciplinaire de Grenoble, auquel est rattaché SPINTEC.
Read moreResistively-coupled stochastic MTJ for energy-based optimum search (January 22nd, 2024)
We study recurrent networks of binary stochastic Magnetic Tunnel Junctions (sMTJ), aiming at efficiently solving computationally hard optimization problems. After validating a prototyping route, we investigate the impact of hybrid CMOS+MTJ building block variants on the quality of stochastic sampling, a key feature for optimum search in a complex landscape. We carry out a functional […]
Read moreDeterministic switching in Voltage Controlled Magnetic Anisotropy Magnetic at Cryogenic Temperatures (January 22nd, 2024)
Cryoelectronics has the potential to become important in high-performance computing applications and in the context of quantum computing. For low-temperature operation, it becomes imperative to reduce power dissipation, and improved device efficiency could even offset the power consumption required for cooling. In magnetic memories, voltage-controlled magnetic anisotropy (VCMA) is a promising approach to minimize the […]
Read morePhD Defense – All-optical switching of spintronic devices (January 12th, 2024)
On Wednesday January 31th, at 10:00, David Salomoni (SPINTEC) will defend (in english) his PhD thesis entitled : All-optical switching of spintronic devices Place : IRIG/SPINTEC, CEA Building 10.05, auditorium 445 (access needs authorization request it before January 20th to admin.spintec@cea.fr) visio conference : https://grenoble-inp.zoom.us/j/95554920195 Abstract : The evolution of computer memory has led to […]
Read morePhD Defense – Magnetic Memories Optimized for Cryoelectronic Operation (November 16th, 2023)
On Monday December 04th, at 14:00, Pedro Brandao Veiga (SPINTEC) will defend his PhD thesis entitled : Magnetic Memories Optimized for Cryoelectronic Operation Place : IRIG/SPINTEC, Amphithéâtre Daniel Dautreppe, Bâtiment B, CEA – 17 rue des Martyrs – Grenoble (access needs authorization request it before November 23th to admin.spintec@cea.fr) visio conference : https://univ-grenoble-alpes-fr.zoom.us/j/97427688514?pwd=aEt6RjZwdlFORktlWjNUTVM5K0lBQT09 Pass […]
Read moreIn plane reorientation induced single laser pulse magnetization reversal (October 27th, 2023)
We demonstrate that single pulse all optical helicity independent switching can be generalized for a large range of rare earth–transition metal multilayers. The threshold fluence for switching is observed to be independent of the pulse duration and, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features […]
Read moreSpiking neuron based on magnetic tunnel junction with dual free layer (October 27th, 2023)
We demonstrate that a perpendicular magnetic tunnel junction (MTJ) is capable of emulating an artificial spiked neuron. The magnetic stack has been designed so that the MTJ has two free layers, whose magnetization can be driven in a windmill-like dynamic by the spin transfer torque. The output-spiking rate is tunable by the dc bias voltage. […]
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