Spin orbit torques allow to move efficiently DW in tracks made of ferromagnetic/spin Hall effect bilayer. Domain wall (DW) detection is then of great importance. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. […]

Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited to generate spin accumulations and pure spin currents in bulk Ge. Here, we use […]

At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in amplitude and sign by an electrostatic gate, a premiere. […]

We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

Who : Fabien RORTAIS from DRF/INAC/SPINTEC When : On the 18th of October 2016 Time : From 02:00 pm to 04:30 pm At : Amphithéâtre de GreEn-ER- 21 rue des Martyrs, 38000 Grenoble Title : Study of injection and detection in silicon and germanium: From local measure of accumulation to non-local detection of pure spin […]

Van der Waals epitaxy of III-Nitrides semiconductors ((Ga, In, Al)N) on 2D crystals ((Mo,W)Se2) for optoelectronics applications Van der Waals (VdW) epitaxy is a particularly attractive method to grow crystalline materials without any requirement of lattice matching with the underlying material. Indeed, VdW epitaxy mechanisms relies on a very weak interaction between the epilayer and […]

On 25th October 2016 our host Institut INAC welcomes students for a presentation of internship topics proposed to host Master-2 students during Spring 2017. Details will be provided later.

A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to using the electric charge of the electron, spintronic technologies […]