Non-volatile memory cell, Di Pendina, G., Prenat, G. (2013)

Dispositif à mémoire non-volatile, Di Pendina, G., Javerliac, V. (2013)

Memory cell with non-volatile data storage, Di Pendina, G. (2013)

Thermally- assisted MRAM cells with improved reliability at writing, Bandiera, S., Prejbeanu, I.L. (2013)

Multilevel MRAM for low consumption and reliable write operation, Alvarez-Hérault, J., Lombard, L., Bandiera, S., Prejbeanu, I.L. (2013)

C. Baraduc, M. Chshiev, B. Dieny, in Giant Magnetoresistance (GMR) Sensors From Basis to State-of-the-Art Applications, C. Reig, S. Cardoso de Freitas, S. Chandra Mukhopadhyay Eds., Smart Sensors, Measurement and Instrumentation vol.6, Springer (2013). Abstract This introduction to spintronic phenomena deals with the three major physical effects of this research field: giant magnetoresistance, tunnel magnetoresistance […]

Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications, Zhang, Y., Zhao, W.S., Prenat, G., Devolder, T., Klein, J.-O., Chappert, C., Dieny, B., Ravelosona, D., IEEE Transactions on Magnetics, 49, 4375 (2013)

Electron-spin-based phenomena arising from pore edges of graphene nanomeshes, Tada, K., Kosugi, N., Sakuramoto, K., Hashimoto, T., Takeuchi, K., Yagi, Y., Haruyama, J., Yang, H.X., Chshiev, M., Journal of Superconductivity and Novel Magnetism, 26, 1037 (2013)

MRAM with soft reference layer: In-stack combination of memory and logic functions, Stainer, Q., Lombard, L., Mackay, K., Sousa, R.C., Prejbeanu, I.L., Dieny, B., , 84 (2013)

MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling, Sousa, R.C., Bandiera, S., Marins de Castro Souza, M., Lacoste, B., San Emeterio Alvarez, L., Nistor, L.E., Auffret, S., Ebels, U., Ducruet, C., Prejbeanu, I.L., Vila, L., Rodmacq, B., Dieny, B., , (2013)