Selected publications (2016 onwards)
More topology in quantum electronic circuits (May 13th, 2024)
In the framework of the French-German laboratory association between SPINTEC and the IFW Dresden (CNRS International Research Project « SPINMAT »), and in collaboration with the C2N institute and the university of Würzburg, a novel plateform was implemented to reveal the non-hermitian topology of scalable quantum electronic circuits. It opens some new perspectives to realize […]
Read moreResistively-coupled stochastic MTJ for energy-based optimum search (January 22nd, 2024)
We study recurrent networks of binary stochastic Magnetic Tunnel Junctions (sMTJ), aiming at efficiently solving computationally hard optimization problems. After validating a prototyping route, we investigate the impact of hybrid CMOS+MTJ building block variants on the quality of stochastic sampling, a key feature for optimum search in a complex landscape. We carry out a functional […]
Read moreDeterministic switching in Voltage Controlled Magnetic Anisotropy Magnetic at Cryogenic Temperatures (January 22nd, 2024)
Cryoelectronics has the potential to become important in high-performance computing applications and in the context of quantum computing. For low-temperature operation, it becomes imperative to reduce power dissipation, and improved device efficiency could even offset the power consumption required for cooling. In magnetic memories, voltage-controlled magnetic anisotropy (VCMA) is a promising approach to minimize the […]
Read moreThe spin diode (January 22nd, 2024)
Spin electronics applies to a wide range of materials: metals, where spin is transported by electrons, but also magnetic insulators, where spin is transported by magnons. The latter are of interest because in certain insulators, such as yttrium iron garnet (YIG), it is predicted that one could reach a state of superfluidity, i.e. spin transport […]
Read moreLocal setting of spin textures in antiferromagnets (December 11th, 2023)
The setting of spin textures in antiferromagnets (AFMs) provides a potential route to antiferromagnetic spintronic devices with non-collinear spin states such as skyrmions, bubbles and domain walls. In this work, a consortium of physicists from SPINTEC and York establish a solution for overcoming the challenge of nucleating localized real-space spin textures in AFMs, promoting the […]
Read moreIn plane reorientation induced single laser pulse magnetization reversal (October 27th, 2023)
We demonstrate that single pulse all optical helicity independent switching can be generalized for a large range of rare earth–transition metal multilayers. The threshold fluence for switching is observed to be independent of the pulse duration and, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features […]
Read moreSpiking neuron based on magnetic tunnel junction with dual free layer (October 27th, 2023)
We demonstrate that a perpendicular magnetic tunnel junction (MTJ) is capable of emulating an artificial spiked neuron. The magnetic stack has been designed so that the MTJ has two free layers, whose magnetization can be driven in a windmill-like dynamic by the spin transfer torque. The output-spiking rate is tunable by the dc bias voltage. […]
Read moreA high gain flux concentrator greatly amplifies the sensitivity of a magnetic field sensor (October 16th, 2023)
The large magnetometers currently used onboard satellites for space exploration cannot be installed in the tiny nanosatellites (cubesat) that are envisioned for multipoint measurements. As a first step towards the realization of a miniature space magnetometer, Spintec has demonstrated a strong amplification of the sensitivity of a magnetic field sensor on chip. The current magnetometers […]
Read moreSpinDrop: Dropout Based Bayesian Binary Neural Networks with STT-MRAM (October 16th, 2023)
Bayesian NN (BayNN) using Dropout-based approximation provides a systematic approach for estimating the uncertainty of predictions. Despite such merit, they are not suitable for implementation in an embedded device and in most cases cannot meet high-performance demands for certain applications. Computation in-memory (CiM) architecture with spintronics emerging non-volatile memories (NVMs) is a great candidate for […]
Read moreEpitaxial van der Waals heterostructures of Cr2Te3 on 2D material (August 01st, 2023)
For the future integration of 2D materials in spintronic devices (sensors, memories…), the ability to grow van der Waals (vdW) heterostructures combining 2D magnets, high mobility, high spin-orbit coupling (SOC) or topological materials on large areas constitutes a real challenge today. Here, by using molecular beam epitaxy in the van der Waals regime, we could […]
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