Selected publications (2016 onwards)
Magnetic Origami (January 08th, 2016)
Magnetic Origami Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. Mihai MIRON The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the functionality […]
Read moreGiant enhancement of magnetic effect will benefit spintronics (January 08th, 2016)
Giant enhancement of magnetic effect will benefit spintronics Researchers from Spintec have demonstrated that coating a cobalt film in graphene doubles the film’s perpendicular magnetic anisotropy (PMA), so that it reaches a value 20 times higher than that of traditional metallic cobalt/platinum multilayers that are being researched for this property. In a material with a […]
Read morePerpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer (September 02nd, 2015)
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)
Read moreCorrelation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications (August 31st, 2015)
Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications
Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.
Read moreBand-Edge Noise Spectroscopy of a Magnetic Tunnel Junction (August 30th, 2015)
Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction
We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0
SPIN-POLARISED TRANSPORT MECHANISMS AT THE FERROMAGNET/SILICON INTERFACE (July 02nd, 2015)
M. Kanoun, R. Benabderrahmane, C. Duluard, C. Baraduc, N. Bruyant, A. Bsiesy, Carrier transport mechanism across tunnel dielectric barrier separating a ferromagnet from silicon is an important issue for spin-polarised electrons injection into non magnetic semiconductors. Direct tunnelling of electrons between the ferromagnet and the silicon energy bands is a prerequisite for spin conservation through […]
Read moreDOMAIN WALL MOTION IN PERPENDICULAR MAGNETIZED SAMPLES (July 02nd, 2015)
I.-M. Miron, T. Moore, P.-J. Zermatten, G. Serret, S. Auffret, B. Rodmacq, G. Gaudin, A. Schuhl Controlling locally the motion of magnetic domain walls (DW) by a spin polarized current would lead to new applications in spintronics devices. Up to now, it has been mainly studied in materials with in-plane magnetization. However the diffi- culty […]
Read moreFerromagnetic/antiferromagnetic exchange bias nanostructures for ultimate spintronic devices (February 06th, 2015)
Akmaldinov, Kamil (2015). Download
Read moreSuper-exchange Co-graphene heterostructures with giant perpendicular magnetic anisotropy (January 01st, 2015)
Super-exchange Co-graphene heterostructures with giant perpendicular magnetic anisotropy, Yang, H.X., Chshiev, M., Hallal, A., Journal, xx, yy (2015)
Read moreControlling the spin-torque efficiency with ferroelectric barriers (January 01st, 2015)
Controlling the spin-torque efficiency with ferroelectric barriers, Useinov, A., Chshiev, M., Manchon, A., Physical Review B, 91, 064412 (2015)
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