N. Thiery, A. Draveny, V. V. Naletov, L. Vila, J. P. Attané, C. Beigné, G. de Loubens, M. Viret, N. Beaulieu, J. Ben Youssef, V. E. Demidov, S. O. Demokritov, A. N. Slavin, V. S. Tiberkevich, A. Anane, P. Bortolotti, V. Cros, and O. Klein, Phys. Rev. B 97, 060409 (2018). N. Thiery, V. V. […]

T. Brächer, M. Fabre, T. Meyer, T. Fischer, S. Auffret, O. Boulle, U. Ebels, P. Pirro, G. Gaudin, Nano Lett. 17, 7234 (2017) Detection of Short-Waved Spin Waves in Individual Microscopic Spin-Wave Waveguides Using the Inverse Spin Hall Effect We report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm […]

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession, and relaxation processes. It is argued that the […]

Michal Stano, Olivier Fruchart, Magnetic nanowires and nanotubes, pp.155-267, in Handbook of Magnetism and Magnetic Materials 27, E. Brück Ed (2018). DOI: 10.1016/bs.hmm.2018.08.002 We propose a review of the current knowledge about the synthesis, magnetic properties and applications of magnetic cylindrical nanowires and nanotubes. By nano we consider diameters reasonably smaller than a micrometer. At […]

Bernard Dieny (from Spintec) and Cheol Seong Hwang are Guest Editors for a topical issue of the MRS Bulletin in May 2018, dedicated to Advanced memory—Materials for a new era of information technology. View online: DOI: 10.1557/mrs.2018.96 Material development has played a crucial role in modern civilization and information technology (IT). The importance of high-density […]

V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, and Y. Tserkovnyak, Rev. Mod. Phys. 90, 015005 (2018) Spintronics utilizing antiferromagnetic materials has potential for the next generation of applications and offers opportunities for new ideas. Ultimately, antiferromagnets could replace ferromagnets as the active spin-dependent element on which spintronic devices are based. Central to […]

A team at SPINTEC in Grenoble has demonstrated thermally stable and electrically switchable Spin Transfer Torque MRAM (STT-MRAM) of diameter down to 4nm. Among the various technologies of non-volatile memories, STT-MRAM gathers a unique combination of assets: non-volatility, write speed (3-30ns), density (4Gbit demonstrated by Hynix/Toshiba), low consumption (a few tens of fJ/write), and very […]

This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. The possibility to combine ultrathin magnetic and non-magnetic layers allowed creating hetero-structures whose dimensions are smaller than the characteristic lengths of the spin-dependent transport. This has notably led to the discovery of […]

[In French] Article “Le point sur la Spintronique” dans le magazine de la recherche et de ses applications Les Défis du CEA Octobre 2017 N°221.

The stiffening of the perpendicular magnetic tunnel junction (pMTJ) stack resulting from the W insertion due to its very high melting temperature, is the key mechanism behind the extremely high thermal robustness. Thicker W layer in the W(t)/Ta 1 nm cap layer makes the storage electrode of pMTJ stack highly robust against annealing up to […]