Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface (January 09th, 2017)
We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]
Read moreMisalign to write faster (October 17th, 2016)
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]
Read morePerpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer (September 02nd, 2015)
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)
Read moreCorrelation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications (August 31st, 2015)
Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications
Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.
Read moreBand-Edge Noise Spectroscopy of a Magnetic Tunnel Junction (August 30th, 2015)
Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction
We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0
Super-exchange Co-graphene heterostructures with giant perpendicular magnetic anisotropy (January 01st, 2015)
Super-exchange Co-graphene heterostructures with giant perpendicular magnetic anisotropy, Yang, H.X., Chshiev, M., Hallal, A., Journal, xx, yy (2015)
Read moreControlling the spin-torque efficiency with ferroelectric barriers (January 01st, 2015)
Controlling the spin-torque efficiency with ferroelectric barriers, Useinov, A., Chshiev, M., Manchon, A., Physical Review B, 91, 064412 (2015)
Read moreThe nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry (January 01st, 2015)
The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry, Tetienne, J.-P., Hingant, T., Martinez, L.J., Rohart, S., Thiaville, A., Diez, L.H., Garcia, K., Adam, J.-P., Kim, J.V., Roch, J.-F., Miron, I.M., Gaudin, G., Vila, L., Ocker, B., Ravelosona, D., Jacques, V., Nature Communications, 6, 6733 (2015)
Read moreSpin transport and magnetization dynamics in irregular geometries: Self-consistent finite-element approach (January 01st, 2015)
Spin transport and magnetization dynamics in irregular geometries: Self-consistent finite-element approach, Sturma, M., Toussaint, J.-C., Gusakova, D., Applied Physics Letters, xx, yy (2015)
Read moreNon-linear mode interaction between spin torque driven and damped modes in spin torque nano-oscillators (January 01st, 2015)
Non-linear mode interaction between spin torque driven and damped modes in spin torque nano-oscillators, Romera, M., Monteblanco, E., Garcia-Sanchez, F., Delaet, B., Buda-Prejbeanu, L. D., Ebels, U., Applied Physics Letters, 106, 5 (2015)
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