At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in amplitude and sign by an electrostatic gate, a premiere. […]

We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 exhibits characteristics of a stoichiometric 2H-phase, a van der Waals epitaxy regarding the substrate and we have evidenced […]

We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction. By comparing to micromagnetic simulations, we have demonstrated that spatially periodic excitation sources can be used to create a uni-directional spin-wave-emission source whose properties can be predicted by our model. Since miniaturization of CMOS devices […]

Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, linear response, required proximity to the sample, as well as the ability to filter noise and […]

We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the spin-orbit coupling. The spin-orbit coupling, relating the electron spin and momentum, has long […]

The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost completely suppressed by inducing an oblique anisotropy (easy-cone anisotropy) in the storage layer. This […]

Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer, Cuchet, L., Rodmacq, B., Auffret, S., Sousa, R.C., Prejbeanu, I.L., Dieny, B., Journal of Applied Physics, 117 (23), 233901 (2015)    

Correlation Between Disordered Magnetic Phases in Ferromagnetic/Antiferromagnetic Thin Films and Device-to-Device Variability of Exchange Bias in Spintronic Applications

Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferromagnetic/antiferromagnetic thin film, affect the device-to-device variability of exchange bias in magnetic applications once the film is nanofabricated.

Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction

We propose a conceptually new way to gather information on the electron bands of buried metal-(semiconductor-)insulator interfaces. The bias dependence of low frequency noise in Fe1−xVx=MgO=Feð0

Disordered magnetic phases located over ferromagnetic/antiferromagnetic films: Impact on cell-to-cell variability of exchange bias in thermally-assisted MRAM chips, Akmaldinov, K., Frangou, L., Ducruet, C., Portemont, C., Pereira, J., Joumard, I., Dieny, B., Alvarez-Hérault, J., Baltz, V., Applied Physics Letters, xx, yy (2015)