CONFERENCE PROCEEDINGS Archives - Page 2 of 15

InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engineers (January 01st, 2014)

InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engineers, Di Pendina, G., Prenat, G., Dieny, B., , 21 (2014)

Hybrid CMOS/Magnetic Process Design Kit and SOT-based Non-volatile Standard Cell Architectures (January 01st, 2014)

Hybrid CMOS/Magnetic Process Design Kit and SOT-based Non-volatile Standard Cell Architectures, Di Pendina, G., Jabeur, K., Prenat, G., Ieee,, 692-699 (2014)

Double barrier magnetic tunnel junctions with write/read mode select layer (January 01st, 2014)

Double barrier magnetic tunnel junctions with write/read mode select layer, Clement, P.-Y., Baraduc, C., Chshiev, M., Dieny, B., Vila, L., Ducruet, C. (2014)

Current-induced domain wall dynamics in the presence of spin-orbit torques (January 01st, 2014)

Current-induced domain wall dynamics in the presence of spin-orbit torques, Boulle, O., Buda-Prejbeanu, L.D., Jué, E., Miron, I.M., Gaudin, G., Journal of Applied Physics, 115, 17D502 (2014)

Breakdown mechanisms in MgO-based magnetic tunnel junctions and correlation with low frequency noise (January 01st, 2014)

Breakdown mechanisms in MgO-based magnetic tunnel junctions and correlation with low frequency noise, Amara-Dababi, S., Sousa, R.C., Béa, H., Baraduc, C., Mackay, K., Dieny, B., , 6A.1.1 (2014)

Mixing antiferromagnets to tune NiFe-[IrMn/FeMn] interfacial spin-glasses, grains thermal stability, and related exchange bias properties (January 01st, 2014)

Mixing antiferromagnets to tune NiFe-[IrMn/FeMn] interfacial spin-glasses, grains thermal stability, and related exchange bias properties, Akmaldinov, K., Ducruet, C., Portemont, C., Joumard, I., Prejbeanu, I.L., Dieny, B., Baltz, V., Journal of Applied Physics, 115, 17B718 (2014)

Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications (January 01st, 2013)

Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications, Zhang, Y., Zhao, W.S., Prenat, G., Devolder, T., Klein, J.-O., Chappert, C., Dieny, B., Ravelosona, D., IEEE Transactions on Magnetics, 49, 4375 (2013)

Electron-spin-based phenomena arising from pore edges of graphene nanomeshes (January 01st, 2013)

Electron-spin-based phenomena arising from pore edges of graphene nanomeshes, Tada, K., Kosugi, N., Sakuramoto, K., Hashimoto, T., Takeuchi, K., Yagi, Y., Haruyama, J., Yang, H.X., Chshiev, M., Journal of Superconductivity and Novel Magnetism, 26, 1037 (2013)

MRAM with soft reference layer: In-stack combination of memory and logic functions (January 01st, 2013)

MRAM with soft reference layer: In-stack combination of memory and logic functions, Stainer, Q., Lombard, L., Mackay, K., Sousa, R.C., Prejbeanu, I.L., Dieny, B., , 84 (2013)

MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling (January 01st, 2013)

MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling, Sousa, R.C., Bandiera, S., Marins de Castro Souza, M., Lacoste, B., San Emeterio Alvarez, L., Nistor, L.E., Auffret, S., Ebels, U., Ducruet, C., Prejbeanu, I.L., Vila, L., Rodmacq, B., Dieny, B., , (2013)