Projects



Major contractual projects involving SPINTEC


MARIN – An ANR project

MARIN stands for Magnon Reservoir computINg. It is a 42 months researcher project funded by the French ANR. MARIN aims at showing that spin waves can be used in the field of “wave-computing” where oscillatory signals are proposed to perform analog non-Boolean operations such as reservoir computing (see Figure). The MARIN project will investigate experimentally […]

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UFO – An ANR project

UFO stands for UltraFast Opto-magneto-spintronics for Futur Nanotechnologies. UltraFast Opto-magneto-spintronics is an emerging field of research that combines the ideas and concepts of magneto-optics and opto-magnetism with spin transport phenomena, supplemented with the possibilities offered by photonics for ultrafast low-dissipative manipulation and transport of information. Both light and spin currents can control magnetic order, though […]

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CRYMCO – An ANR project

The goal of project CRYMCO is to optimize MRAM cell concepts for operation in cryogenic temperature environments. The project will explore applications for storage in conventional and quantum information processing. In the first case, MRAM with low energy dissipation for cryogenic environments could result in power savings by operating at low temperature, when the cost/power […]

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ELMAX – An ANR project

ELMAX stands for ELectrical Control of Magnetization in fully epitaXial van der Waals heterostructures. It is a 36 months young researcher project funded by the French ANR. The recent discovery of 2D magnets has enabled the investigation of spin devices fully made of van der Waals materials. Thanks to their two-dimensional nature, 2D magnets generally […]

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SpinSpike – An ANR project

SpinSpike stands for Spintronic Spiking Neurons. It is a 42-month-long ANR project (2021/2024). Spintronics has recently shown its promise for neuromorphic computing, but is lacking an essential ingredient of biological neural networks: spiking neurons. In this context, the objective of SpinSpike project is to explore novel approaches of spiking neurons using magnetic tunnel junctions. Building […]

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CONTRABASS – An ANR project

CONTRABASS stands for Ferroelectric control of Rashba states, a 42 months ANR project starting in December 2020. Spintronics devices involve ferromagnetic elements with high switching energies. Contrastingly, the polarization of ferroelectrics can be easily switched by an electric field, at energies typically 1000 times lower. Combined with high spin-orbit coupling elements, ferroelectrics have also a […]

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MATHEEIAS stands for MAgneto-THermo-Electric Effects In Antiferromagnetic Spintronics. It is a 48 months collaborative international project co-funded by the French ANR and the German DFG. The project relies on the following consortium: SPINTEC Grenoble, CINAM Marseille, TUD Dresden / Uni. Konstanz, and JGU Mainz, in close collaboration with FZU & Charles Uni. Prague. The aim […]

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k-net – An H2020 project

A key component of artificial intelligence is neuromorphic computing, which represents the endeavor to replicate the human brain to perform efficiently very complex tasks such as pattern recognition. Until now, almost all practical implementations of deep neural-networks are emulated using nanostructured electronic components that try to replicate the brain’s volume architecture on a surface. However, […]

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SPEAR – An H2020 ITN project

Spintec is part of a European-funded ITN project called SPEAR: Spin-orbit materials, emergent phenomena and related technology training. The project, coordinated by CIC nanoGUNE, seeks to explore new materials for the next generation of computer memories and processors. six European academic institutions (CEA-France, ETH Zürich-Switzerland, IMEC-Belgium, U. Hamburg-Germany, Martin Luther University Halle–Germany, CIC Nanogune) and […]

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SOFT – ERC Proof of Concept grant

Non-volatility is the main physical feature that fast memories, such as SRAM, are still lacking. Such memories could increase computing performance while reducing significantly the power consumption. The only viable option for sub-ns nonvolatile memory is the Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM). The main roadblock towards the integration of the SOT-MRAM is that […]

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