A new research project has been accepted at the last FET H2020 call. The objective of SPICE is to realize a novel integration platform that combines photonic, magnetic and electronic components. Its validity will be shown by a conceptually new spintronic-photonic memory chip demonstrator with three orders of magnitude faster write speed and two orders […]

January 1st 2016 brings at SPINTEC: the arrival of 10 new researchers from the former INAC/SP2M/NM lab Jean-Philippe Attané; Cyrille Beigné; Ariel Brenac; Matthieu Jamet; Alain Marty; Robert Morel; Lucien Notin; Céline Vergnaud; Laurent Vila; Patrick Warin (Welcome to them!)  as well as a new management team (Lucian Prejbeanu – director / Olivier Fruchart – deputy director) . Lucian conducted research on […]

Bernard Dieny from INAC/SPINTEC received the thematic Prize « Adrien Constantin de Magny » for his research in nanomagnetism and spin-electronics. His research results already found applications in hard disk drives used in computers as well as magnetic memories and should allow the development of very low power electronic circuits in the near future. Bernard […]

Spintec développe une mémoire STT-MRAM dix fois plus rapide que les produits annoncés pour 2016 chez Samsung ou Intel. Sa vitesse d’écriture est inférieure à la nanoseconde, contre 5 à 10 nanosecondes habituellement. La différence tient au processus de déclenchement du pulse d’écriture. Spintec l’accélère grâce à deux polariseurs d’aimantation orthogonale, placés de part et […]

Bernard Dieny a reçu lors d’une cérémonie annuelle de remise de prix de l’Académie des Sciences le prix “Adrien Constantin de Magny”. La cérémonie s’est déroulée le 13 octobre sous la Coupole de l’Institut de France. Ce prix biennal recompense “un savant dont les travaux pratiques auront paru remarquables à l’Académie”. Toutes nos félicitations à Bernard […]

Les mémoires magnétiques à base de jonctions tunnel magnétiques appelées Spin-Transfer-Torque Random Access Memories (STT-MRAM) suscitent un intérêt considérable pour la micro-électronique grâce à leurs avantages combinés de non-volatilité, densité, vitesse, endurance. Dans ce travail, une nouvelle variété de telles mémoires a été développée offrant une vitesse d’écriture sub-ns appropriée pour les applications de type […]

  Magnetic memories based on magnetic tunnel junctions, called Spin-Transfer-Torque Random Access Memories (STT-MRAM), are stimulating a considerable interest in microelectronics thanks to their combination of assets: non-volatility, density, speed, endurance. In this work, a new flavor of these memories was developed allowing ultrafast (sub-ns) writing suitable for cache SRAM-type of applications.   Spin-transfer-torque (STT) […]

List of proposals for Master-2 internships proposed during Fall 2015, for internships to take place during Spring 2016.

A new H2020 project called GREAT has been funded at the last ICT call! Congratulations to Guillaume Prenat & the team ! Strategic objectives addressed Demonstrate the relevance of the magnetic Multifunctional Standardized Stack (MSS) in a CMOS process for the co-integration of digital, analog and RF IPs using Spin Transfer Torque devices. Investigate, design, develop, and analyze […]