Seminar – Atomic scale correlation of structural and magnetic properties of SiC semiconductor implanted with Fe. (May 03rd, 2019)
On Tuesday June 25, we have the pleasure to welcome Lindor Diallo from Université de Normandie and INSA Rouen, he will give us a seminar at 14:00, CEA/IRIG, Bat 1005, room 446 entitled : Atomic scale correlation of structural and magnetic properties of SiC semiconductor implanted with Fe. The discovery of giant magnetoresistance in 1988 […]
Read more[Filled] Senior research scientist in spintronic devices (May 02nd, 2019)
In view of a forthcoming opening of a CEA researcher position at SPINTEC, in order to reinforce the spintronic devices group (memories, sensors, RF oscillators, magnetic logic) of the lab, we are seeking a high-level senior scientist who is willing to contribute to existing activities as well as to open new device directions in this […]
Read more[POSITION FILLED] PhD topic – Spintronics with epitaxial 2D materials and topological insulators (April 30th, 2019)
Transition metal dichalcogenides (MoS2, WSe2, etc.) and topological insulators (Bi2Se3, Bi2Te3) are graphene siblings holding great promise for semiconductor spintronics. They possess an intense spin-orbit interaction that couples the electron momentum and spin. This coupling can be used to manipulate spins with electric fields, to convert charge currents into spin currents, and gives rise to […]
Read moreSeminar – skyrmions in the Zero-Magnetisation Limit (March 26th, 2019)
On Friday April 5, we have the pleasure to welcome Laurent Ranno from Néel Institute, he will give us a talk at 14:30, CEA/SPINTEC, Bat 1005, room 434A entitled : Skyrmions in the Zero-Magnetisation Limit Skyrmions have been experimentally observed in several ultrathin film systems. I will describe them, compare them, using the same model, […]
Read morePhD topic – Spintronics on magnetic skyrmions at Spintec (March 25th, 2019)
Spintec invites application for a phd thesis position in spintronics on magnetic skyrmions. Magnetic skyrmions are nm scale topological spin texture that hold great promise for storing and manipulating the information at the nanoscale. Spintec recently demonstrated magnetic skyrmions at room temperature in ultrathin nanostructures [1] as well as their manipulation using electric field [2,3] […]
Read more[POSITION FILLED] PhD position – Exploring the scalability of spintronics for 3D devices (March 17th, 2019)
Topic Classical microelectronics is reaching its limits of downward scalability, reaching technological or scientific bottlenecks. Magnetic random access memories, based on magnetic tunnel junctions storing and reading bits of information, are emerging key ICT components. They are of immediate relevance for low-power and high-speed processor and mass-storage cache memory. Similar to other technologies, ways are […]
Read morePHD Defense – Magnetic particles for the treatment of cancer by magneto-mechanical effect, application to glioblastoma (March 14th, 2019)
On Friday 26 April at 9h30 Cécile NAUD from SPINTEC will defend her PHD entitled: Magnetic particles for the treatment of cancer by magneto-mechanical effect, application to glioblastoma Place : Palladium 2 (floor) Maison MINATEC (free entrance) Abstract: Glioblastoma is a brain cancer with a very poor prognosis. Existing therapies improve only slightly the median […]
Read moreSeminar – Spin Hall effect and anisotropic spin dynamics in graphene-based spin devices (March 07th, 2019)
On March, 21, we have the pleasure to welcome Williams Savero Torres from the Catalan Institut of Nanoscience and Nanotechnology (ICN2), Barcelone, Spain. Doctor in Physics from UGA/SPINTEC (2011-2014), he will give us a seminar at 11:00, CEA/IRIG, Bat. 1005, room 445 entitled : Spin Hall effect and anisotropic spin dynamics in graphene-based spin devices […]
Read morePost-doctoral – position perpendicular shape anisotropy (March 07th, 2019)
Investigation of magnetization dynamics spin transfer torque driven reversal in perpendicular shape anisotropy magnetic tunnel junctions Spin Transfer Torque Random Access Memories (STTRAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, density, downsize scalability below 20nm nodes, infinite endurance plus radiation hardness. Major microelectronics companies are aiming to introduce […]
Read moreNanopoly — A FET-OPEN project (February 15th, 2019)
NANOPOLY proposes a ground-breaking yet cost effective method to extend our control over impedance and parasitic phenomena in monolithic circuit components by independently tuning electric permittivity and magnetic permeability of the integrated layers to values far beyond what nature can provide. This approach will re-define all components used in existing analogue circuit design regardless of […]
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