Neuromorphic computing is a bio-inspired technology which aims at mimicking the brain working principles. It can be used for fast and energy-efficient applications through the implementation of networks of artificial neurons and synapses. Artificial synapses are implemented as electronic components called memristors. These are non-volatile memory devices whose resistance can take several intermediate values between […]

Spintec has acquired a new 200mm HProbe automatic prober dedicated to the study and characterisation of SOT-MRAM memories. The equipment was funded by the Auvergne-Rhône-Alpes region’s Pack Ambition Recherche 2019 programme, via a research project run jointly by SPINTEC and the start-up Antaios. A few years ago, SPINTEC discovered a new writing mechanism, the SOT […]

The PTA, Upstream Technological Platform, is a 1000 class clean room resulting from the pooling of  technical and human resources of IRIG (Institut de recherche interdisciplinaire du CEA Grenoble) and LTM (Laboratoire des Technologies de la Microélectronique du CNRS, UJF et INP). The clean room extends over 700 m2, 350 m² on CEA site and 350 m² in the Grenoble INP […]

Magnetic spintronic memory called STT-MRAM have recently entered in volume production at major microelectronic foundries. The research in this area is now focused on preparing the future memory generations with higher capacity, higher speed, lower power consumption, wider range of operating temperature. To conduct this type of research, it is important to be able to […]

This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2. Ever since the […]

MRAM is a type of nonvolatile memory that stores the binary information through the magnetic configuration of its main building block: the Magnetic Tunnel Junction (MTJ). In the last decade, the use of perpendicular anisotropy existing at the tunnel barrier interface, allowed to improve MRAM manufacturability. However, the thermal sensitivity of the interfacial anisotropy is […]

L’Usine Nouvelle, magazine dédié à l’industrie, met en avant la spintronique avec une série d’articles, dont deux sur des startups de SPINTEC: La France est au top niveau mondial dans la spintronique [Made in France] La pépite Antaïos réinvente la mémoire magnétique Hprobe, la pépite française qui veut accélérer le test de mémoires et capteurs […]

The generation of a spin current and its further conversion to a charge current have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications in the field of spintronics. In this study, we experimentally and theoretically demonstrated the self-induced inverse spin Hall effect for spin-charge conversion, triggered by […]

Hprobe passe à la vitesse supérieure. Après avoir levé 300 000 euros en avril 2018, la start-up issue de SPINTEC et spécialiste du test magnétique de composants semi-conducteurs vient de boucler un deuxième tour de table de 2 millions d’euros. Parmi les investisseurs figurent le fond d’investissement taïwanais ITIC et l’équipementier japonais de production de […]

We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]