Rana Alhalabi has been awarded of the best poster prize at the 18th Non-Volatile Memory Technology Symposium that took place in October 2018 in Sendai, Japan. The title of the poster was “High density SOT-MRAM memory array based on a single transistor”. Based on a 32kb memory, this work has shown that replacing one of the two transistor by a diode enables a 49% reduction of the number of transistors with less control logic, thus well adapted for high density memory architecture.