Crossovers from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation, Rodmacq, B., Auffret, S., Dieny, B., Monso, S., Boyer, P., Journal of Applied Physics, 93, 7513 (2003)

Precessional switching of the magnetization in microscopic magnetic tunnel junctions, Schumacher, H.W., Chappert, C., Sousa, R.C., Freitas, P., Miltat, J., Ferré, J., Journal of Applied Physics, 93, 7290 (2003)

Injection of spin-polarized current into semiconductor, Vedyaev, A., Dieny, B., Ryzhanova, N., Zhukov, I.A., Zhuravlev, M.Ye., Lutz, H.O., Journal of Magnetism and Magnetic Materials, 258, 77 (2003)

Support d’enregistrement magnétique multiniveaux, Baltz, V., B. Dieny and B. Rodmacq (2003)

Mémoire magnétique à jonction tunnel magnétique et procédé pour son écriture, Dieny, B., R.C. Sousa and D. Stanescu (2003)

Fabrication et tests de points mémoire non-volatile à base de jonctions tunnel magnétiques, Monso, Sandra, 191 (2003)

Enregistrement ultra-haute densité sur réseau de plots magnétiques nanométriques à aimantation perpendiculaire au plan, Moritz, Jérôme (2003)

Influence of s-d interfacial scattering on the magnetoresistance of magnetic tunnel junctions, Bagrets, D., Bagrets, A., Vedyaev, A., Dieny, B., Physical Review B, 65, 064430 (2002)

Influence of deposition angle on the properties of NiO spin valves, Cartier, M., Auffret, S., Bayle-Guillemaud, P., Ernult, F., Fettar, F., Dieny, B., Journal of Applied Physics, 91, 1436 (2002)

Modeling of the current lines in discontinuous metal/insulator multilayers, Ernult, F., Giacomoni, L., Marty, A., Dieny, B., Vedyaev, A., Ryzhanova, N., European Physical Journal B, 25, 177 (2002)