Electron-spin-based phenomena arising from pore edges of graphene nanomeshes, Tada, K., Kosugi, N., Sakuramoto, K., Hashimoto, T., Takeuchi, K., Yagi, Y., Haruyama, J., Yang, H.X., Chshiev, M., Journal of Superconductivity and Novel Magnetism, 26, 1037 (2013)

Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications, Zhang, Y., Zhao, W.S., Prenat, G., Devolder, T., Klein, J.-O., Chappert, C., Dieny, B., Ravelosona, D., IEEE Transactions on Magnetics, 49, 4375 (2013)

C. Baraduc, M. Chshiev, B. Dieny, in Giant Magnetoresistance (GMR) Sensors From Basis to State-of-the-Art Applications, C. Reig, S. Cardoso de Freitas, S. Chandra Mukhopadhyay Eds., Smart Sensors, Measurement and Instrumentation vol.6, Springer (2013). Abstract This introduction to spintronic phenomena deals with the three major physical effects of this research field: giant magnetoresistance, tunnel magnetoresistance […]

Multilevel MRAM for low consumption and reliable write operation, Alvarez-Hérault, J., Lombard, L., Bandiera, S., Prejbeanu, I.L. (2013)

Thermally- assisted MRAM cells with improved reliability at writing, Bandiera, S., Prejbeanu, I.L. (2013)

Memory cell with non-volatile data storage, Di Pendina, G. (2013)

Dispositif à mémoire non-volatile, Di Pendina, G., Javerliac, V. (2013)

Non-volatile memory cell, Di Pendina, G., Prenat, G. (2013)

Dispositif magnétique contrôlé en tension et fonctionnant sur une large gamme de température, Dieny, B., Béa, H., Bandiera, S. (2013)

Cellule mémoire non volatile, Jabeur, K., di Pendina, G. (2013)