We propose an original concept of spintronic memristor based on the angular variation of the tunnel magnetoresistance (TMR) of a nanopillar comprising several magnetic layers. We have experimentally developed the appropriate magnetic free layer and integrated it in a full nanosized magnetic tunnel junction pillar. In parallel, we developed a model describing the magnetization dynamics […]

Gestionnaire financier(e) pour assister le coordinateur du projet DARPA (H/F) Durée: 12 mois Date d’embauche prévue : 1 mars 2020 Contexte de travail: Le CNRS recrute un/une gestionnaire financier(ère) pour aider le coordinateur d’un projet collaboratif financé par l’agence états-unienne de financement DARPA (Defense Advanced Research Projects Agency). Ce projet dans le domaine de la […]

On Monday 9th of Decembre at 13h30 Mounia KHARBOUCHE-HARRARI, will defend her thesis, jointly carried out by IM2NP, CEA-Tech and SPINTEC, entitled : « Hybridation CMOS/STT-MRAM des circuits intégrés pour la sécurité matérielle de l’Internet des Objets » Place : amphithéâtre HS02 au sein du Campus Georges Charpak Provence, 880 route de Mimet, 13541 Gardanne […]

Numerous studies investigated the use of synthetic membranes for photonic or biomedical applications. We report here on a recent type of biocompatible magnetically actuated membranes, partly originating from studies on magnetic particles for biology, consisting of PDMS/Au bilayers with embedded arrays of micrometric magnetic pillars. Flat at zero field, concave in an applied magnetic field, […]

Domain wall propagation in modulated-diameter cylindrical nanowires is a key phenomenon to be studied with a view to designing three-dimensional magnetic memory devices. In this framework, we quantified theoretically the driving force needed for a domain wall to overcome the potential barrier related to modulated diameter geometry in order to jump from one stable position […]

Post-doctoral position available at IRIG/Spintec (12 months with possible extension) Nanostructures of 2D Materials for quantum optics and spintronics (NanoDRUM project) Recently, there has been tremendous interest in layered transition metal dichalcogenides (TMDCs). It started with the discovery that the canonical TMDC MoS2 becomes a direct bandgap semiconductor when isolated in monolayer (ML) form [Splendiani […]

Increasing the thermal budget beyond 400°C of magnetic random access memory (MRAM) cells is a major goal to allow for seamless conventional electronics integration. At these temperatures significant material diffusion can destroy the interface properties of new generation perpendicular magnetization stacks targeting technology nodes below 20nm. This study highlights the origin in the improvement obtained […]

Transition metal dichalcogenides (MoS2, WSe2, etc.) and topological insulators (Bi2Se3, Bi2Te3) are graphene siblings holding great promise for semiconductor spintronics. They possess an intense spin-orbit interaction that couples the electron momentum and spin. This coupling can be used to manipulate spins with electric fields, to convert charge currents into spin currents, and gives rise to […]

A full hybrid magnetic/CMOS System on Chip (SoC), embedding analog and digital functions based on spintronics devices on the same die, has been designed and sent to manufacturing. It is the first demonstrator of such a circuit worldwide. Spintronics, which aims at using magnetic devices beside standard CMOS transistors, has been intensively studied for several […]

A new concept of thermally stable and electrically switchable Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) scalable to diameter down to 4nm was proposed and demonstrated. By dramatically increasing the thickness of the storage layer, a bulk magnetic anisotropy perpendicular to the plane of the layers can be induced which dramatically improves the memory […]